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SQV120N06-4M7L_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 60V 120A TO262-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SQV120N06-4M7L_GE3
- Description：MOSFET N-CH 60V 120A TO262-3
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：230 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8800 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：250W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-262-3
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Single FETs, MOSFETs datasheet and documents for SQV120N06-4M7L_GE3
Single FETs, MOSFETs Overview
The SQV120N06-4M7L_GE3 is an automotive-grade N-channel power MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and supports a continuous drain current of 120 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 4.7 mΩ at VGS = 10 V and 6.0 mΩ at VGS = 4.5 V. It operates within a junction temperature range of -55 °C to +175 °C and is housed in a TO-262 package.
Single FETs, MOSFETs Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- TrenchFET power MOSFET architecture with low thermal resistance
- 100% tested for gate resistance and unclamped inductive switching
Single FETs, MOSFETs Applications
- Automotive power distribution systems
- High-current motor control applications
- Low-side switching circuits requiring high efficiency
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance requirements. Confirm that the component meets the intended environmental specifications for your application. Ensure proper handling procedures are followed during assembly to maintain device integrity.
Single FETs, MOSFETs Selection Notes
Select this component when a robust N-channel solution is required for automotive environments. Consider the low on-resistance for minimizing conduction losses. Evaluate the thermal performance based on the specific PCB layout and cooling conditions available in the design.
Single FETs, MOSFETs Part Context
This part belongs to the Vishay Siliconix SQV series, designed specifically for demanding automotive applications. The series emphasizes high current handling capabilities combined with ruggedness against transient events. It represents a specialized segment of power semiconductors tailored for vehicle electronics.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution lists or contact technical support for verified alternatives. Do not assume pin compatibility or electrical equivalence with other packages without explicit manufacturer confirmation.
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