SS9015CBU

Single Bipolar Transistors Overview

The SS9015CBU is a PNP epitaxial silicon transistor manufactured by onsemi, housed in a TO-92-3 through-hole package. It features a collector-emitter voltage of -45 V and a maximum collector current of -100 mA. The device dissipates up to 450 mW with a junction temperature rating of 150 °C. Electrical characteristics include a DC current gain (hFE) range of 200 to 600 for the 'C' suffix classification, a transition frequency of 190 MHz, and a noise figure as low as 0.7 dB.

Single Bipolar Transistors Feature Summary

• Designed as a complement to the SS9014 NPN transistor for matched pair applications.
• Optimized for low-frequency and low-noise amplifier circuits.
• Utilizes an epitaxial silicon construction for stable performance.

Single Bipolar Transistors Applications

• Low-frequency amplification stages
• Low-noise signal processing circuits
• General-purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify component authenticity and datasheet revision status due to discontinued production history. Confirm that the 'CBU' suffix corresponds to the specific hFE binning requirements of your design. Check for RoHS compliance documentation and ensure the TO-92-3 lead form matches assembly specifications. Validate supply chain sources against authorized distributors to avoid counterfeit components.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with low noise characteristics is required for audio or sensor interfaces. Ensure the circuit design accommodates the -45 V collector-emitter breakdown limit. Verify that the required DC current gain falls within the 200 to 600 range specified for the C-class bin. Consider thermal management if operating near the 450 mW power dissipation limit.

Single Bipolar Transistors Part Context

This part belongs to the SS9015 family of small-signal bipolar junction transistors. Originally developed by Fairchild Semiconductor, the product line was later acquired by onsemi. The SS9015 series is widely recognized as a standard replacement for legacy designs requiring matched PNP/NPN pairs, specifically pairing with the SS8015/SS8550 families in various configurations.

Single Bipolar Transistors Replacement Considerations

• SS9015ABU
• SS9015DBU

Single Bipolar Transistors FAQ

What does the 'C' suffix indicate in the SS9015CBU part number?

The 'C' suffix denotes a specific DC current gain (hFE) classification, typically ranging from 200 to 600 at a collector current of -1 mA and Vce of -5 V.

Is the SS9015CBU suitable for high-frequency RF applications?

No, it is designed for low-frequency applications. Its transition frequency is rated at 190 MHz, which limits its effectiveness in high-frequency RF circuits compared to dedicated RF transistors.

What is the recommended complementary transistor for the SS9015?

The SS9014 is the designated complementary NPN transistor, providing matched electrical characteristics for push-pull or differential amplifier configurations.