SSF2120Y

$0.20

Description：MOSFET N/P-CH 20V 0.8A SOT563
Series：-

SKU:336e0b39bb53 Category: FET, MOSFET Arrays Brand: Good-Ark Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 0.8A SOT563
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：800mA (Tc), 400mA (Tc)
Rds On (Max) @ Id, Vgs：300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：75pF @ 10V, 78pF @ 10V
Power - Max：312mW
Operating Temperature：-55°C ~ 150°C
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563
Grade：-
Qualification：-

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SSF2120Y

Overview

The SSF2120Y is a 20V N-Channel and P-Channel complementary MOSFET in an SOT-563 package. The N-Channel features a maximum drain-source voltage of 20V, continuous drain current of 800mA at 25°C, and typical on-resistance of 300mΩ at VGS=4.5V. The P-Channel offers a -20V breakdown voltage, -400mA continuous current, and 600mΩ typical on-resistance at VGS=-4.5V. Both channels operate within a junction temperature range of -55°C to +150°C.

Feature Summary

Complementary N-Channel and P-Channel configuration in a single compact SOT-563 package
Advanced MOSFET process technology for high cell density and low on-resistance
Fast switching and reverse body recovery characteristics
Low gate charge for efficient drive requirements

Applications

High efficiency switch mode power supplies
Notebook computer load switches
Networking equipment
Hand-held devices

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape specifications. Confirm that the component meets all required automotive or industrial qualification standards if applicable to the target design. Cross-reference the datasheet revision date with the production batch to ensure consistency in electrical parameters.

Selection Notes

Select this component for applications requiring dual-channel control in a minimal footprint. The N-Channel is suitable for higher current paths up to 800mA, while the P-Channel handles lower currents around 400mA. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance. Consider thermal derating factors when operating near the maximum junction temperature limits.

Part Context

This device belongs to Good-Ark Semiconductor's discrete semiconductor portfolio, specifically designed for portable electronics. It utilizes advanced processing techniques to achieve high reliability and efficiency. The complementary nature allows for simplified circuit designs in load switching and power management applications where space is constrained.