SSF2145CH6

$0.31

Description：MOSFET 20V 4.8A 6TSOP
Series：-

SKU:f17b4f923e2b Category: FET, MOSFET Arrays Brand: Good-Ark Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 20V 4.8A 6TSOP
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：4.8A (Tc), 2.9A (Tc)
Rds On (Max) @ Id, Vgs：55mOhm @ 3.6A, 4.5V, 80mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：420pF @ 10V
Power - Max：1.7W
Operating Temperature：-55°C ~ 150°C
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：6-TSOP
Grade：-
Qualification：-

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SSF2145CH6

Overview

The SSF2145CH6 is a complementary MOSFET pair in a TSOP-6 package, featuring an N-channel device with 20V drain-source voltage and 4.8A continuous current, alongside a P-channel counterpart rated at -20V and -2.9A. The N-channel exhibits a typical on-resistance of 38mΩ, while the P-channel measures 68mΩ. Both devices support a junction temperature up to 150°C and utilize advanced trench technology for high cell density.

Feature Summary

Complementary N-channel and P-channel configuration within a single compact package
Advanced trench MOSFET process technology ensuring high cell density
Low on-resistance characteristics for improved efficiency in switching applications
Designed specifically for load switching and battery protection circuits

Applications

Load switching circuits
Battery protection systems
High efficiency switch mode power supplies

Procurement Notes

Verify the specific datasheet revision date against manufacturing requirements. Confirm that the TSOP-6 package dimensions align with PCB footprint constraints. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under steady-state conditions. Validate that the operating voltage range matches system specifications.

Selection Notes

Select this component when space-constrained complementary switching is required. The low on-resistance values minimize conduction losses in power paths. Consider the 150°C maximum junction temperature for high-temperature environments. Verify gate threshold voltages match the driving logic levels for reliable turn-on and turn-off performance.

Part Context

This dual MOSFET integrates both N-channel and P-channel devices into one assembly, simplifying board layout compared to discrete components. It belongs to Good-Ark Semiconductor's lineup of complementary transistor pairs designed for portable electronics and power management applications requiring minimal footprint.