SSF2219Y

$0.28

Description：MOSFET 2P-CH 20V 0.4A SOT563
Series：-

SKU:a588ae5128e8 Category: FET, MOSFET Arrays Brand: Good-Ark Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 0.4A SOT563
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：400mA (Tc)
Rds On (Max) @ Id, Vgs：600mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：78pF @ 10V
Power - Max：312mW (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563
Grade：-
Qualification：-

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SSF2219Y

Overview

The SSF2219Y is a dual P-channel MOSFET manufactured by Good-Ark Semiconductor, housed in an SOT-563 surface-mount package. It features a drain-source voltage (Vdss) of -20 V and a continuous drain current (Id) of -400 mA at 25°C case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 600 mΩ at Vgs = -4.5 V and Id = -0.3 A. Key electrical parameters include a gate threshold voltage (Vgs(th)) ranging from -0.3 V to -1.0 V, a total gate charge (Qg) of 2 nC at Vgs = -4.5 V, and a power dissipation of 312 mW at 25°C. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Dual P-channel configuration with fast switching and reverse body recovery capabilities
Advanced MOSFET process technology achieving high cell density and low on-resistance
Low gate charge characteristics for efficient drive requirements
SOT-563 compact surface-mount packaging

Applications

High efficiency switch mode power supplies
Notebook computer load switches
Networking equipment
Hand-held devices

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging quantities and reel specifications. Confirm that the requested part matches the exact SSF2219Y designation without additional alphanumeric modifications that could alter pinout or electrical ratings. Cross-reference the datasheet revision date to ensure compatibility with current design standards.

Selection Notes

Select this component for applications requiring a compact dual P-channel solution with low on-resistance. Ensure the operating gate-source voltage aligns with the specified thresholds for optimal Rds(on) performance. Consider the thermal resistance and power dissipation limits when designing heat management strategies for the SOT-563 package.

Part Context

This component belongs to the discrete semiconductor category, specifically within the field-effect transistor family. It is designed as a single-element dual configuration utilizing silicon metal-oxide semiconductor technology. The device is intended for general-purpose switching applications where space constraints and efficiency are critical factors.