SSF6670

SSF6670

$0.34
  • Description:MOSFET 2N-CH 60V 3.5A 8SOP
  • Series:-

SKU:0c091e7e3129 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 3.5A 8SOP
  • Series:-
  • Mfr:Good-Ark Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:3.5A
  • Rds On (Max) @ Id, Vgs:90mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:500pF @ 25V
  • Power - Max:2.4W
  • Operating Temperature:-55°C ~ 175°C
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Grade:-
  • Qualification:-

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SSF6670

Overview

The SSF6670 is a dual N-channel MOSFET from Good-Ark Semiconductor, housed in an SOP-8 package. It features a drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 5 A at 25°C. The maximum on-resistance (Rds(on)) is 90 mΩ at Vgs=10V with Id=5A. Key electrical parameters include a gate threshold voltage (Vgs(th)) ranging from 1.2 V to 2.5 V, total gate charge (Qg) up to 8 nC, and input capacitance (Ciss) up to 540 pF. The device supports a junction temperature range of -55°C to +150°C and offers a power dissipation of 2.5 W.

Feature Summary

  • Dual N-channel configuration within a single SOP-8 package for space-efficient designs
  • Advanced process technology achieving low on-resistance and high cell density
  • Fast switching speed combined with low gate charge for improved efficiency
  • Reverse body diode characteristics suitable for synchronous rectification

Applications

  • High efficiency switched mode power supplies
  • DC-DC converter circuits
  • Low voltage battery powered applications

Procurement Notes

Verify the specific manufacturer source when ordering, as component availability may vary across distributors. Confirm the SOP-8 package marking matches 'SSF6670' upon receipt. Ensure thermal management aligns with the specified 60 °C/W junction-to-ambient resistance for continuous operation. Check for RoHS compliance status if required by your manufacturing standards.

Selection Notes

Select this component for applications requiring dual N-channel isolation in a compact surface-mount footprint. The 60 V rating provides adequate headroom for 12 V or 24 V systems. Consider the 90 mΩ Rds(on) limit for conduction loss calculations at full load. The logic-level gate drive capability allows direct interfacing with standard microcontrollers or drivers operating at 3.3 V or 5 V.

Part Context

This part belongs to the category of dual discrete MOSFETs designed for power management. It serves as a compact alternative to using two separate single-channel devices, reducing board space and parasitic inductance. The SOP-8 package facilitates automated assembly while providing sufficient thermal dissipation for moderate current levels typical in consumer electronics and industrial control modules.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

FAQ

What is the maximum continuous drain current for the SSF6670?

The maximum continuous drain current is 5 A at an ambient temperature of 25°C.

Does the SSF6670 support avalanche energy ratings?

Yes, the datasheet specifies a single pulse avalanche energy of 8 mJ and a single pulse avalanche current of 12.8 A.

What is the package type for the SSF6670?

The SSF6670 is available in an SOP-8 surface-mount package.

SSF6670SSF6670
$0.34
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