SSFK2219

$0.33

Description：MOSFET 2P-CH 20V 0.54A SOT363
Series：-

SKU:12d2a31548d0 Category: FET, MOSFET Arrays Brand: Good-Ark Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 0.54A SOT363
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：540mA (Ta)
Rds On (Max) @ Id, Vgs：600mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：78pF @ 10V
Power - Max：278mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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SSFK2219

Overview

The SSFK2219 is a dual P-channel MOSFET in an SOT-363 package. It features a drain-source voltage of -20V and a continuous drain current of -540mA at 25°C. The on-resistance is typically 440mΩ at VGS=-4.5V, rising to 850mΩ at -2.5V. Gate charge is typically 1nC. Thermal resistance junction-to-ambient is 450°C/W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Dual P-channel configuration within a compact surface-mount package
Advanced process technology for high cell density and low on-resistance
Fast switching and reverse body recovery characteristics
Low gate charge optimized for high efficiency switched mode power supplies

Applications

High efficiency switched mode power supplies
General purpose switching circuits
Load switch applications

Procurement Notes

Verify the specific datasheet revision (Doc.USSSFK2219xSP3.1) matches your design requirements. Confirm that the SOT-363 package dimensions align with your PCB footprint. Ensure thermal management strategies account for the specified junction-to-ambient resistance under your expected operating conditions.

Selection Notes

Select this component for low-voltage, low-current dual P-channel applications requiring minimal board space. The low gate charge supports efficient operation in high-frequency switching environments. Verify that the -20V rating exceeds your maximum circuit voltage and that the -540mA current capacity meets load requirements.

Part Context

This device belongs to Good-Ark Semiconductor's MOSFET portfolio, utilizing advanced processing techniques to achieve high cell density. The dual configuration integrates two independent P-channel devices into a single SOT-363 package, reducing component count compared to discrete solutions.