SSFK3220B

$0.26

Description：MOSFET 2N-CH 20V 0.8A SOT363
Series：-

SKU:6b89001e84f7 Category: FET, MOSFET Arrays Brand: Good-Ark Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 0.8A SOT363
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：800mA (Tc)
Rds On (Max) @ Id, Vgs：300mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：75pF @ 10V
Power - Max：275mW (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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SSFK3220B

Overview

The SSFK3220B is a dual N-channel MOSFET in an SOT-363 package. It features a 20V drain-source voltage (VDS) and 800mA continuous drain current (ID). The on-resistance (RDS(ON)) is typically 300mΩ at VGS=4.5V, ID=0.5A. Gate threshold voltage (VGS(th)) ranges from 0.3V to 1.0V. Total gate charge (Qg) is typically 1nC. Thermal resistance junction-to-ambient is 450°C/W. Operating temperature range is -55°C to +150°C.

Feature Summary

Dual N-channel configuration with fast switching and reverse body recovery capabilities.
Optimized for low on-resistance and low gate charge to enhance efficiency.
Compatible with 1.5V gate drive applications for improved logic interface.
Integrated ESD protection rated up to 2KV.

Applications

High efficiency switch mode power supplies
Low-side load switches
Battery management systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and carrier quantity. Ensure the component meets RoHS compliance requirements as stated in the datasheet. Confirm that the SOT-363 package dimensions align with your PCB footprint design constraints before finalizing procurement.

Selection Notes

Select this component for applications requiring dual N-channel MOSFETs with low voltage ratings and high efficiency. The low gate charge and compatibility with 1.5V gate drives make it suitable for battery-powered devices. Consider the thermal resistance and power dissipation limits when designing heat management solutions for continuous operation.

Part Context

This device belongs to Good-Ark Semiconductor's line of dual N-channel MOSFETs. It utilizes advanced cell density techniques to achieve low on-resistance. The SOT-363 package provides a compact solution for space-constrained designs. The product is designed for reliability in various electronic applications.