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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 40A 8PPAK
- Series：-
- Mfr：Good-Ark Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：40A (Tc)
- Rds On (Max) @ Id, Vgs：6.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1750pF @ 25V
- Power - Max：46W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：8-PPAK (5x5.8)
- Grade：-
- Qualification：-
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Overview
The SSFP3806 is a dual N-channel MOSFET from Good-Ark Semiconductor featuring a PPAK5x6 surface-mount package. It supports a drain-source voltage of 30V and continuous drain current of 40A at 25°C case temperature. The device exhibits a typical on-resistance of 6.5mΩ at VGS=10V and ID=20A, with a maximum rating of 9mΩ at VGS=4.5V. Gate charge is typically 11.1nC. Thermal resistance junction-to-case is 2.7°C/W, supporting operation up to 150°C.
Feature Summary
- Dual N-Channel configuration for high-efficiency synchronous rectification
- Advanced process technology enabling low on-resistance and fast switching
- Optimized reverse body diode recovery characteristics
Applications
- High efficiency switched mode power supplies
- Synchronous rectification circuits
- DC-DC converter modules
Procurement Notes
Verify the specific manufacturer datasheet version against the requested component specifications before integration. Confirm that the PPAK5x6 footprint matches the design layout requirements. Ensure thermal management solutions align with the specified junction-to-case thermal resistance limits during operation.
Selection Notes
Select this component for applications requiring compact dual-channel integration within limited board space. Evaluate the 30V breakdown voltage against peak transient loads. Consider the 6.5mΩ on-resistance for conduction loss calculations in high-current paths. Verify gate drive compatibility with the 11.1nC total gate charge requirement.
Part Context
This component belongs to the Good-Ark Semiconductor discrete semiconductor portfolio, specifically designed as a power switching solution. It utilizes advanced cell density techniques to achieve performance metrics suitable for modern power electronics. The device serves as a standalone switching element rather than an integrated module.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum pulsed drain current capability?
The SSFP3806 supports a maximum pulsed drain current (IDM) of 160A.
Does the device support avalanche energy ratings?
Yes, the datasheet specifies a single pulse avalanche energy (EAS) of 20mJ under defined test conditions.
What is the operating junction temperature range?
The operating junction temperature range extends from -55°C to +150°C.
