SSFQ3712

$0.34

Description：MOSFET N/P-CH 30V 8A 8SOP
Series：-

SKU:d91203a448a9 Category: FET, MOSFET Arrays Brand: Good-Ark Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 8A 8SOP
Series：-
Mfr：Good-Ark Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：8A (Tc), 5.5A (Tc)
Rds On (Max) @ Id, Vgs：20mOhm @ 8A, 10V, 50mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6nC @ 4.5V, 7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：500pF @ 25V, 810pF @ 15V
Power - Max：2.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

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SSFQ3712

Overview

The SSFQ3712 is a 30V N-Channel and P-Channel complementary MOSFET in an SOP-8 package. The N-Channel features an 8A continuous drain current and a maximum on-resistance of 20mΩ at VGS=10V. The P-Channel provides a -5.5A continuous drain current with a maximum on-resistance of 50mΩ at VGS=-10V. Both channels exhibit low gate charge for fast switching, high cell density, and reverse body recovery capabilities.

Feature Summary

Complementary N-Channel and P-Channel configuration in a single package
Advanced MOSFET process technology for high cell density
Fast switching and reverse body recovery characteristics
Low on-resistance combined with low gate charge

Applications

High efficiency switched mode power supplies
DC/DC converters
Power management circuits

Procurement Notes

Verify the specific manufacturer datasheet to confirm the exact electrical parameters and thermal characteristics before integration. Ensure the SOP-8 package dimensions align with the target PCB footprint. Confirm that the voltage and current ratings meet the system requirements under all operating conditions.

Selection Notes

Select this component for applications requiring a compact complementary pair within a limited board space. The low on-resistance values support efficient power conversion, while the fast switching speeds minimize energy loss during transitions. Consider the thermal resistance when designing heat dissipation strategies.

Part Context

This device belongs to the category of complementary MOSFETs designed for power electronics. It integrates both N-type and P-type transistors into one unit, simplifying circuit design by reducing component count. The SOP-8 package offers a balance between performance and size for surface-mount assembly.

Replacement Considerations

Check pinout compatibility and electrical specifications against existing designs. Verify that the replacement part meets or exceeds the required voltage, current, and thermal ratings. Ensure the package type matches the available footprint on the printed circuit board.