SSFQ6810

Overview

The SSFQ6810 is a dual N-Channel MOSFET featuring a 60V drain-source breakdown voltage and a maximum continuous drain current of 5.0A. It utilizes advanced M2S technology to achieve low on-resistance, with RDS(on) values of 54mΩ at VGS=10V and 63mΩ at VGS=4.5V. The device operates within a junction temperature range of -55°C to 150°C and is housed in an SOP-8 package.

Feature Summary

• Advanced M2S process technology for high cell density
• Low on-resistance combined with low gate charge
• Fast switching and reverse body recovery characteristics

Applications

• High efficiency switch mode power supplies
• Battery protection circuits
• Load switch applications
• Hand-held devices

Procurement Notes

Verify the specific manufacturer datasheet version against the ordered component lot. Confirm that the SOP-8 package dimensions and marking codes match the DS6810 specification. Ensure thermal management requirements align with the provided safe operating area curves for the intended application environment.

Selection Notes

Select this component when a compact dual N-channel configuration is required for space-constrained designs. The low gate charge facilitates efficient driving in high-frequency switching applications. Verify that the 60V rating provides sufficient margin for the target circuit's peak voltage transients.

Part Context

This component belongs to the family of dual MOSFETs designed for integrated power management solutions. It consolidates two independent channels into a single SOP-8 footprint, reducing board space compared to discrete single-channel alternatives while maintaining comparable electrical performance metrics.

Replacement Considerations

No public confirmed substitute part numbers are available.