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SSM3J35FS,LF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is SMALL LOW RON PCH MOSFETS VDSS:-. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SSM3J35FS,LF
- Description：SMALL LOW RON PCH MOSFETS VDSS:-
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4V
- Rds On (Max) @ Id, Vgs：8Ohm @ 50mA, 4V
- Vgs(th) (Max) @ Id：1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：12.2 pF @ 3 V
- FET Feature：-
- Power Dissipation (Max)：100mW (Ta)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SSM
- Package / Case：SC-75, SOT-416
Single FETs, MOSFETs datasheet and documents for SSM3J35FS,LF
Single FETs, MOSFETs Overview
The SSM3J35FS,LF is a P-channel enhancement mode MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes U-MOSVII technology and is housed in an SOT-416-3 package. The device features a drain-source voltage of 20 V and a continuous drain current of 250 mA. Key electrical parameters include a maximum on-resistance of 1.1 Ohms at a gate-source voltage of -4 V, a threshold voltage of 1 V, and a power dissipation rating of 500 mW. The component operates within a temperature range of -55°C to +150°C junction temperature.
Single FETs, MOSFETs Feature Summary
- Utilizes U-MOSVII silicon gate technology for enhanced performance
- Designed for surface mount applications with low thermal resistance
- Optimized for low on-resistance operation
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Power management modules
- Load switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix LF for lead-free compliance against the official Toshiba datasheet. Confirm the SOT-416-3 package type matches the design requirements. Ensure the ordering code corresponds exactly to the single P-channel configuration. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a compact P-channel switch with moderate current handling capabilities. The 20 V rating suits low-voltage systems. The 1.1 Ohm on-resistance is suitable for efficiency-conscious applications where voltage drop is a constraint. Verify that the 250 mA current limit meets the load requirements without exceeding thermal limits.
Single FETs, MOSFETs Part Context
This part belongs to the SSM3J35 series of small-signal MOSFETs from Toshiba. The series offers various packages and current ratings for different power management needs. The SSM3J35FS variant specifically targets space-constrained PCB layouts while maintaining reliable switching characteristics for consumer and industrial electronics.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the SSM3J35 family or other Toshiba P-channel MOSFETs with identical pinouts and similar electrical specifications. Ensure any replacement maintains the same package footprint and voltage/current ratings.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
