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The SSM6L11TU(TE85L,F) is a dual MOSFET array from Toshiba Semiconductor and Storage, featuring one N-Channel and one P-Channel enhancement-mode transistor. Designed for surface-mount installation in the UF-6 package, it supports a drain-source voltage of 20V and a continuous drain current of 0.5A. The component dissipates up to 500mW of power and operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm tape-and-reel specifications. Ensure that the UF-6 footprint matches the target PCB design. Confirm RoHS compliance status through the manufacturer's latest certification records before finalizing procurement orders.
Select this component when a matched N/P pair is required for synchronous rectification or bridge configurations. The UF-6 package offers space efficiency compared to discrete solutions. Evaluate thermal constraints carefully as the 500mW dissipation limit may require adequate copper area for heat spreading in high-duty cycle operations.
This device belongs to the SSM6L series of low-voltage MOSFET arrays. It utilizes Toshiba's UMOS technology to achieve reliable switching characteristics in a small form factor. The series is engineered for consumer electronics and portable devices where board real estate is limited.
Consult official cross-reference lists for verified substitutes. Generic replacements must match the 20V rating, 0.5A current capacity, and UF-6 package dimensions to ensure mechanical and electrical compatibility without redesigning the circuit layout.