SSM6L11TU(TE85L,F)

SSM6L11TU(TE85L,F)

  • Description:MOSFET N/P-CH 20V 0.5A UF6
  • Series:-

SKU:cebe857d95dd Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N/P-CH 20V 0.5A UF6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:500mA
  • Rds On (Max) @ Id, Vgs:145mOhm @ 250MA, 4V
  • Vgs(th) (Max) @ Id:1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:268pF @ 10V
  • Power - Max:500mW
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD, Flat Leads
  • Supplier Device Package:UF6
  • Grade:-
  • Qualification:-

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SSM6L11TU(TE85L,F)

Overview

The SSM6L11TU(TE85L,F) is a dual MOSFET array from Toshiba Semiconductor and Storage, featuring one N-Channel and one P-Channel enhancement-mode transistor. Designed for surface-mount installation in the UF-6 package, it supports a drain-source voltage of 20V and a continuous drain current of 0.5A. The component dissipates up to 500mW of power and operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Integrates complementary N-channel and P-channel transistors into a single compact package
  • Features logic-level gate drive capability for direct interface with digital control circuits
  • Optimized for low-power applications requiring efficient switching performance

Applications

  • DC-DC converter switch implementations
  • Motor driver circuit interfaces
  • General-purpose signal switching
  • Power management unit control

Procurement Notes

Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm tape-and-reel specifications. Ensure that the UF-6 footprint matches the target PCB design. Confirm RoHS compliance status through the manufacturer's latest certification records before finalizing procurement orders.

Selection Notes

Select this component when a matched N/P pair is required for synchronous rectification or bridge configurations. The UF-6 package offers space efficiency compared to discrete solutions. Evaluate thermal constraints carefully as the 500mW dissipation limit may require adequate copper area for heat spreading in high-duty cycle operations.

Part Context

This device belongs to the SSM6L series of low-voltage MOSFET arrays. It utilizes Toshiba's UMOS technology to achieve reliable switching characteristics in a small form factor. The series is engineered for consumer electronics and portable devices where board real estate is limited.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Generic replacements must match the 20V rating, 0.5A current capacity, and UF-6 package dimensions to ensure mechanical and electrical compatibility without redesigning the circuit layout.

SSM6L11TU(TE85L,F)SSM6L11TU(TE85L,F)

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