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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.8A UF6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate, 1.8V Drive
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：800mA (Ta)
- Rds On (Max) @ Id, Vgs：143mOhm @ 600mA, 4V, 234mOhm @ 600mA, 4V
- Vgs(th) (Max) @ Id：1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：268pF @ 10V, 250pF @ 10V
- Power - Max：500mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, Flat Leads
- Supplier Device Package：UF6
- Grade：-
- Qualification：-
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Overview
The SSM6L13TU is a dual-channel silicon MOSFET integrating one N-Channel and one P-Channel transistor in a UF-6 package. It supports 1.8-V drive with low ON-resistance: Nch RDS(ON) = 235 mΩ (max) @ VGS = 1.8 V; Pch RDS(ON) = 460 mΩ (max) @ VGS = -1.8 V. Drain-source voltage ratings are ±20 V, with DC drain currents of ±0.8 A and pulse currents of ±1.6 A. Power dissipation is 500 mW at Ta = 25 °C on an FR4 board. Operating temperature ranges from -55 °C to +150 °C.
Feature Summary
- Integrates complementary N-Channel and P-Channel transistors for compact power management designs
- Optimized for low-voltage logic levels with 1.8-V drive capability
- Features low ON-resistance to minimize conduction losses in switching applications
Applications
- Power Management Switch Applications
- High-Speed Switching Applications
Procurement Notes
Verify the exact ordering suffix against official Toshiba Semiconductor and Storage documentation to confirm packaging format and compliance status. Confirm that the UF-6 package dimensions match your PCB footprint requirements. Ensure thermal design accounts for the specified 500 mW dissipation limit under actual operating conditions.
Selection Notes
Select this component when space-constrained designs require both N-Channel and P-Channel switching capabilities in a single package. The 1.8-V drive specification makes it suitable for modern low-voltage logic interfaces. Evaluate thermal performance based on the specific PCB copper pad area and material used during mounting.
Part Context
This device belongs to Toshiba's Field-Effect Transistor lineup utilizing Silicon MOS technology. It is designed specifically for applications requiring efficient power switching with minimal footprint. The integration of two channels into one UF-6 package aids in reducing overall system size and complexity.
Replacement Considerations
Consult official Toshiba documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' dual MOSFETs without verifying pinout, electrical parameters, and package dimensions.
