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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.5A ES6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：500mA, 330mA
- Rds On (Max) @ Id, Vgs：630mOhm @ 200mA, 5V
- Vgs(th) (Max) @ Id：1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：1.23nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds：46pF @ 10V
- Power - Max：150mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：ES6
- Grade：-
- Qualification：-
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Overview
The SSM6L36FE,LM is a dual N/P-channel MOSFET in an ES6 package. It features a 20 V drain-source breakdown voltage for the N-channel and -20 V for the P-channel. The N-channel supports a continuous drain current of 500 mA with a maximum on-resistance of 1.52 Ω at 1.5 V gate drive. The P-channel provides 330 mA current capability with a maximum on-resistance of 3.60 Ω at -1.5 V gate drive. Total power dissipation is rated at 150 mW, and the device operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- Supports low-voltage logic-level driving with optimized on-resistance characteristics at 1.5 V gate-source voltages.
- Integrates complementary N-channel and P-channel transistors into a single compact surface-mount package.
- Designed for high-speed switching applications with low total gate charge values.
Applications
- High-speed switching circuits
- Low-voltage logic interface applications
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer's part number against official Toshiba Semiconductor datasheets. Confirm that the ES6 package marking matches the provided pinout diagram. Ensure compliance with RoHS directives and verify storage conditions to prevent electrostatic discharge damage prior to mounting.
Selection Notes
Select this component when a complementary pair of small-signal MOSFETs is required in a minimal footprint. The N-channel threshold voltage ranges from 0.35 V to 1.0 V, while the P-channel ranges from -0.3 V to -1.0 V. Verify that the application's gate drive voltage aligns with the specified on-resistance curves for optimal performance.
Part Context
This component belongs to the SSM6L series of dual MOSFETs manufactured by Toshiba Semiconductor and Storage. It utilizes silicon technology and is housed in the ES6 (SOT-416) surface-mount package. The device is designed for general-purpose switching and amplification tasks requiring low power consumption.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the verified source material. Consult official distributor databases or Toshiba sales representatives for equivalent components with matching electrical ratings and package dimensions.
