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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.8A UF6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate, 1.8V Drive
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：800mA
- Rds On (Max) @ Id, Vgs：143mOhm @ 600MA, 4V
- Vgs(th) (Max) @ Id：1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：268pF @ 10V
- Power - Max：500mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, Flat Leads
- Supplier Device Package：UF6
- Grade：-
- Qualification：-
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Overview
The SSM6L39TU,LF is a dual small-signal MOSFET manufactured by Toshiba Semiconductor and Storage. It integrates one N-channel and one P-channel enhancement-mode transistor within a UF-6 surface-mount package. The device utilizes U-MOSIII technology for low on-resistance performance. Key electrical parameters include a drain-source breakdown voltage (Vds) of 20 V for both channels. The continuous drain current (Id) is rated at 1.5 A for the N-channel and 1.6 A for the P-channel. On-state resistance (Rds(on)) values are 247 mΩ for the N-channel and 430 mΩ for the P-channel. Gate-source voltage limits range from -10 V to +10 V. The component supports an operating temperature range from -55°C to +150°C with a power dissipation of 500 mW.
Feature Summary
- Dual configuration combining N-channel and P-channel transistors in a single compact package.
- U-MOSIII technology provides low on-resistance characteristics for efficient switching.
- AEC-Q101 qualified for automotive reliability standards.
Applications
- Automotive electronic circuits requiring dual-channel switching.
- General-purpose signal switching applications.
- Low-voltage power management systems.
Procurement Notes
Verify the specific part number suffix against official Toshiba documentation to confirm pinout and electrical specifications. Ensure the UF-6 package footprint matches the design requirements. Confirm RoHS compliance status through the manufacturer's latest datasheet before integration into production.
Selection Notes
Select this component when a dual N/P-channel configuration is required in a minimal footprint. The 20 V rating suits low-voltage logic interfaces. Compare Rds(on) values against circuit loss requirements. Verify thermal management capabilities given the 500 mW power dissipation limit in the UF-6 package.
Part Context
This component belongs to the SSM6L39 series of dual MOSFETs. It shares the UF-6 package and U-MOSIII technology with related parts like the SSM6N39TU and SSM6L40TU. These devices are designed for space-constrained applications requiring complementary switching functionality.
Replacement Considerations
Direct substitutes may include other Toshiba dual MOSFETs in the UF-6 package with similar 20 V ratings. Verify pin compatibility and electrical parameters such as Rds(on) and Id before substitution. Cross-reference with distributor databases for equivalent part numbers.
