SSM6L56FE,LM

$0.26

Description：MOSFET N/P-CH 20V 0.8A ES6
Series：-

SKU:f61e3d703a21 Category: FET, MOSFET Arrays Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 0.8A ES6
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：800mA (Ta)
Rds On (Max) @ Id, Vgs：235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：55pF @ 10V, 100pF @ 10V
Power - Max：150mW (Ta)
Operating Temperature：150°C
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：ES6
Grade：-
Qualification：-

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SSM6L56FE,LM

Overview

The SSM6L56FE,LM is a dual-channel silicon MOSFET containing one N-channel and one P-channel enhancement-mode transistor in an ES6 package. It supports high-speed switching with a 1.5-V drive capability. The N-channel Q1 offers a maximum drain-source on-resistance of 235 mΩ at VGS = 4.5 V and ID = 800 mA. The P-channel Q2 provides a maximum RDS(ON) of 390 mΩ at VGS = -4.5 V and ID = -800 mA. Both channels share a ±8 V gate-source voltage rating and support a continuous drain current of ±800 mA. Power dissipation is rated at 150 mW, with an operating temperature range from -55°C to +150°C.

Feature Summary

Supports low-voltage logic control through 1.5-V drive compatibility for both N-channel and P-channel transistors.
Provides low drain-source on-resistance across various gate voltages to minimize conduction losses in power management applications.
Integrates complementary N- and P-channel devices into a single compact surface-mount package for space-constrained designs.

Applications

High-speed switching circuits
Power management switches
Low-voltage load switch applications

Procurement Notes

Verify the specific ordering code suffix against official Toshiba documentation to confirm packaging and tape specifications. Ensure that the component source matches the manufacturer's authorized distribution channels to guarantee authenticity and traceability. Confirm RoHS compliance status directly with the supplier prior to procurement.

Selection Notes

Select this component when a complementary N/P-channel pair is required in a minimal footprint. Evaluate the on-resistance requirements against the available gate drive voltage, as RDS(ON) increases significantly below 2.5 V. Verify thermal management capabilities, as the 150 mW power dissipation limit requires adequate PCB copper area for heat spreading.

Part Context

This device belongs to Toshiba's small-signal MOSFET portfolio designed for portable electronics and battery-powered systems. It utilizes advanced cell technology to achieve low resistance within the ES6 package. The dual configuration allows for efficient half-bridge or push-pull driver implementations without requiring separate components.