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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V/20V 4A 6TSOPF
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V, 20V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Rds On (Max) @ Id, Vgs：39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：1V @ 1mA, 1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：3.2nC @ 4.5V, 6.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：310pF @ 15V, 480pF @ 10V
- Power - Max：1.4W (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：6-SMD, Flat Leads
- Supplier Device Package：6-TSOP-F
- Grade：-
- Qualification：-
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Overview
The SSM6L820R,LF is a dual MOSFET component manufactured by Toshiba Semiconductor and Storage. It integrates one N-channel and one P-channel enhancement-mode transistor within a TSOP6F surface-mount package. The device is designed for low-voltage gate drive applications with a drain-source breakdown voltage of 30 V. Continuous drain current capability reaches 4 A per channel. On-resistance values are specified at 39.1 mOhms for the N-channel and 45 mOhms for the P-channel. The unit operates up to a maximum junction temperature of +150 C and dissipates 1.4 W of power. It holds AEC-Q101 qualification for automotive reliability.
Feature Summary
- Automotive-grade reliability certified under AEC-Q101 standards
- Integrated dual configuration combining N-channel and P-channel transistors
- Low on-resistance design optimized for efficient power switching
- Enhanced thermal performance supporting high-temperature operation
Applications
- Automotive electronic control units requiring dual-switching capabilities
- Low-voltage motor driver circuits in vehicle systems
- Power management modules for automotive infotainment systems
Procurement Notes
Verify the specific ordering suffix against official Toshiba documentation to confirm exact specifications. Ensure the component meets required automotive quality standards for the intended application. Cross-reference datasheet parameters with system requirements before procurement. Confirm package type matches PCB layout constraints.
Selection Notes
Select this component when a compact dual MOSFET solution is needed for low-voltage automotive applications. Compare on-resistance and gate charge characteristics against alternative devices to ensure compatibility with existing gate drive circuitry. Verify that the TSOP6F package dimensions fit within the available board space constraints.
Part Context
This part belongs to Toshiba's automotive MOSFET portfolio, specifically engineered for robust performance in demanding vehicular environments. The SSM6 series typically offers integrated solutions to reduce component count and simplify circuit design. This specific model provides a balanced combination of current handling and low resistance for efficient power control.
Replacement Considerations
Check for direct cross-references in Toshiba's replacement guide. Verify pinout compatibility and electrical parameter equivalence if considering alternatives from other manufacturers.
