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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.18A ES6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：180mA
- Rds On (Max) @ Id, Vgs：3Ohm @ 50mA, 4V
- Vgs(th) (Max) @ Id：1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：9.5pF @ 3V
- Power - Max：150mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：ES6
- Grade：-
- Qualification：-
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Overview
The SSM6N35FE,LM is a dual N-channel small-signal MOSFET manufactured by Toshiba. It utilizes the MOSVI technology and is housed in an ES6-6 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) of 180 mA per channel. The on-resistance (Rds(on)) is specified at 20 Ohms for each channel. Gate-source voltage limits are ±10 V, with a threshold voltage (Vgs(th)) of 400 mV. Power dissipation is rated at 150 mW, and the unit operates within a temperature range of -55°C to +150°C.
Feature Summary
- Dual N-channel configuration integrated into a single compact package.
- Utilizes MOSVI technology for enhanced switching performance.
- Capable of operation across a wide industrial temperature range.
Applications
- Cell phone power supply circuits
- Notebook PC power supply circuits
- Lithium-ion secondary battery protection circuits
- Motor driver power driver circuits
Procurement Notes
Verify the specific ordering suffix against official Toshiba documentation to confirm package type and reel specifications. Ensure the component meets RoHS requirements if applicable to the target assembly. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.
Selection Notes
Select this component for applications requiring low-voltage switching with moderate current handling capabilities. The dual configuration allows for space-saving designs in portable electronics. Verify that the 20 Ohm on-resistance aligns with the thermal management constraints of the specific circuit design, as higher resistance may impact efficiency in high-duty cycle operations.
Part Context
This component belongs to the SSM Series of small-signal MOSFETs from Toshiba. The series is designed for ultra-high-density applications in portable devices. The 'N' designation indicates an N-channel configuration, while '35' typically denotes the specific electrical characteristics within the product line. The LM suffix identifies the specific packaging and tape-and-reel format.
Replacement Considerations
Consult Toshiba's official cross-reference guides or datasheets for verified equivalent parts. Ensure any substitute maintains compatible Vds, Id, and Rds(on) ratings. Verify pinout compatibility and package dimensions to ensure mechanical fit without redesigning the PCB footprint.
