SSM6N36FE,LM

Overview

The SSM6N36FE,LM is a dual N-channel enhancement-mode MOSFET from Toshiba's SSM series. It features a U-MOSIII structure and an ES6-6 package. Key electrical parameters include a drain-source breakdown voltage (Vdss) of 20 V, continuous drain current (Id) of 500 mA, and gate-source voltage (Vgs) limits of ±10 V. The device has a maximum on-resistance (Rds(on)) of 630 mΩ at Vgs = 5 V and a typical gate charge (Qg) of 1.23 nC. Power dissipation is rated at 150 mW, with an operating temperature range from -55°C to +150°C. It meets AEC-Q100 qualification standards.

Feature Summary

• Dual N-channel configuration within a compact surface-mount package for space-constrained designs.
• U-MOSIII trench technology providing low on-resistance and high-speed switching capabilities.
• AEC-Q100 automotive qualification ensuring reliability in demanding environments.

Applications

• Cell phone power supply circuits
• Notebook PC power supply circuits
• Lithium-ion secondary battery protection circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and tape-and-reel specifications. Ensure that the component meets all required environmental and quality certifications for the intended application before finalizing procurement decisions.

Selection Notes

Select this component for applications requiring dual N-channel switching with low drive voltage compatibility. Consider the 150 mW power dissipation limit and thermal management requirements when designing the PCB layout. Verify that the 20 V voltage rating aligns with the system's operational limits.

Part Context

This part belongs to Toshiba's SSM series of small-signal MOSFETs, designed for low-voltage, high-density applications. The series utilizes U-MOSIII technology to achieve improved performance metrics compared to standard double-diffusion structures, targeting portable electronics and battery protection systems.

Replacement Considerations

SSM6N36TU,LF