SSM6N37FE,LM

Overview

The Toshiba SSM6N37FE,LM is a dual N-channel silicon MOSFET in an ES6-6 surface-mount package. It features a drain-source voltage of 20 V and a continuous drain current of 250 mA. The device supports low-voltage drive with maximum RDS(ON) values of 5.60 Ω at VGS = 1.5 V, 4.05 Ω at 1.8 V, 3.02 Ω at 2.5 V, and 2.20 Ω at 4.5 V. Gate-source voltage is rated at ±10 V, with a threshold voltage range of 0.35 V to 1.0 V. Power dissipation is 150 mW, operating between -55°C and +150°C.

Feature Summary

• Optimized for high-speed switching applications with fast turn-on and turn-off times.
• Capable of operation with low gate drive voltages starting from 1.5 V.
• Designed for high-density mounting within a compact ES6-6 package.

Applications

• High-speed switching circuits
• Analog switching applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging type and compliance status. Confirm that the component meets all required environmental standards for the intended deployment environment before finalizing procurement decisions.

Selection Notes

Select this component when low-voltage logic compatibility is required alongside high-speed performance. Ensure the design accounts for the thermal resistance characteristics on the target PCB layout to maintain power dissipation within the specified 150 mW limit.

Part Context

This part belongs to the SSM6N37 series of dual N-channel MOSFETs manufactured by Toshiba Semiconductor and Storage. It utilizes U-MOSIII technology to achieve low ON-resistance and fast switching speeds within a small footprint suitable for portable electronics.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout configuration, voltage ratings, and package dimensions to guarantee mechanical and electrical compatibility.