SSM6N37FU,LF

Overview

The SSM6N37FU,LF is a dual N-channel silicon MOSFET in an ES6-6 package. It features a drain-source voltage of 20 V and a continuous drain current of 250 mA. The device supports low-voltage drive with RDS(ON) values of 5.60 Ω max at VGS = 1.5 V, 4.05 Ω max at 1.8 V, 3.02 Ω max at 2.5 V, and 2.20 Ω max at 4.5 V. Gate-source voltage is rated at ±10 V. Power dissipation reaches 300 mW on an FR4 board. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Optimized for high-speed switching and analog applications
• Capable of operation with low gate drive voltages starting at 1.5 V
• Dual configuration within a compact surface-mount footprint

Applications

• High-speed switching circuits
• Analog switch implementations
• Low-voltage signal routing

Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm packaging format and environmental compliance status. Ensure the component matches the required RoHS directive standards for the target assembly process. Confirm that the ES6-6 package dimensions align with the PCB layout specifications before finalizing procurement orders.

Selection Notes

Select this component when circuit designs require dual N-channel MOSFETs operating at low voltages. The device is suitable for applications demanding fast switching speeds with minimal gate drive requirements. Evaluate thermal management strategies carefully, as power dissipation capabilities are dependent on the specific PCB copper pad area and material properties used during mounting.

Part Context

This part belongs to the SSM6N37 series of small-signal MOSFETs manufactured by Toshiba Semiconductor. The series focuses on providing efficient switching performance in compact packages. The SSM6N37FU variant specifically utilizes the ES6-6 form factor to support space-constrained electronic designs requiring dual channel functionality.

Replacement Considerations

SSM6N37FE,LM