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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 1.6A UF6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：1.6A (Ta)
- Rds On (Max) @ Id, Vgs：122mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id：2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：5.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：180pF @ 15V
- Power - Max：500mW (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：6-SMD, Flat Leads
- Supplier Device Package：UF6
- Grade：-
- Qualification：-
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Overview
The SSM6N40TU,LF is a dual N-channel MOSFET array manufactured by Toshiba Semiconductor and Storage. It utilizes U-MOSIII technology in a UF-6 surface-mount package. The device features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 1.6 A at 25°C. Key electrical parameters include a maximum gate threshold voltage of 2.6 V at 1 mA, a maximum gate charge (Qg) of 5.1 nC at 10 V, and a maximum input capacitance (Ciss) of 180 pF at 15 V. The component supports a maximum power dissipation of 500 mW and operates within a temperature range up to 150°C.
Feature Summary
- Dual N-channel configuration for compact circuit integration
- U-MOSIII technology optimized for low on-resistance and fast switching
- Logic-level gate drive compatibility with low threshold voltage
- Automotive qualification compliant with AEC-Q101 standards
Applications
- DC-DC converter output stages
- Motor driver circuits
- Load switch applications in portable devices
Procurement Notes
Verify the specific ordering suffix and manufacturer part number against official Toshiba documentation to ensure correct variant selection. Confirm RoHS compliance status and automotive qualification requirements prior to procurement. Cross-reference datasheet revisions to validate parameter consistency for the intended design application.
Selection Notes
Select this component for designs requiring a dual N-channel solution in a small UF-6 footprint. Ensure the operating voltage remains within the 30 V limit and that thermal management accommodates the 500 mW power dissipation rating. Verify that the logic level gate drive requirements align with the system's control voltage levels.
Part Context
This part belongs to the SSM6 series of dual MOSFET arrays from Toshiba. It shares the UF-6 package form factor with other variants in the lineup but differs in channel type and electrical ratings. The series is designed for space-constrained applications requiring multiple switching elements.
Replacement Considerations
Direct substitutes must match the dual N-channel configuration, 30 V rating, 1.6 A current capacity, and UF-6 package. Verify pinout compatibility and electrical parameters against alternative manufacturers' offerings before implementation.
