SSM6N42FE(TE85L,F)

Overview

The SSM6N42FE(TE85L,F) is a dual N-channel MOSFET from Toshiba's SSM series, housed in an ESV-6 (ES6) package. It features a π-MOSVI structure with a drain-source breakdown voltage of 20 V and a continuous drain current rating of 0.26 A. The device has a maximum drain-source on-resistance of 0.252 Ω at a gate-source voltage of 10 V. It operates within a temperature range of -55°C to +150°C and supports a power dissipation of 150 mW.

Feature Summary

• Dual N-channel configuration for compact circuit integration
• π-MOSVI trench technology for low on-resistance
• High operating junction temperature capability

Applications

• Small-signal switching applications
• Portable electronic devices
• Notebook PC power supply circuits

Procurement Notes

Verify the specific ordering suffix TE85L,F against the manufacturer's official documentation to confirm reel specifications and tape-and-reel dimensions. Ensure that the component meets RoHS compliance requirements as stated in the product guide before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel configuration is required in a small surface-mount package. The 20 V rating and 0.26 A current capacity suit low-voltage signal switching tasks. Verify that the 0.252 Ω on-resistance aligns with the thermal management constraints of the target application design.

Part Context

This part belongs to the SSM series of small-signal MOSFETs designed for miniaturization. The ES6 package provides a compact footprint suitable for high-density board layouts. The π-MOSVI process technology offers improved performance characteristics compared to earlier generation double-diffusion structures.

Replacement Considerations

Check for direct pin-compatible alternatives within the same SSM series or other manufacturers offering dual N-channel MOSFETs in the ES6 package with similar 20 V ratings.