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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.5A US6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate, 1.5V Drive
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：500mA
- Rds On (Max) @ Id, Vgs：630mOhm @ 200mA, 5V
- Vgs(th) (Max) @ Id：1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：1.23nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds：46pF @ 10V
- Power - Max：200mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：US6
- Grade：-
- Qualification：-
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Overview
The SSM6N43FU,LF is a dual N-channel silicon MOSFET in a US-6 (SOT-363) package. It features a drain-source voltage of 20 V and a continuous drain current of 500 mA. The device supports low-voltage drive with an RDS(ON) of 1.52 Ω max at VGS = 1.5 V and 0.63 Ω max at VGS = 5.0 V. Key electrical parameters include a gate threshold voltage of 0.35 V to 1.0 V, forward transfer admittance of 840 mS, and total gate charge of 1.23 nC. Switching times are 30 ns turn-on and 75 ns turn-off. Power dissipation is 200 mW, operating temperature ranges from -55°C to +150°C.
Feature Summary
- Optimized for high-speed switching applications with low gate charge.
- Capable of direct drive from 1.5 V logic sources.
- Low on-resistance across various gate voltage levels.
Applications
- High-speed switching circuits
- Power management switches
- DC-DC converters
Procurement Notes
Verify the component against the official Toshiba datasheet specifications to ensure compatibility with circuit requirements. Confirm that the package marking matches the expected identifier. Ensure handling procedures account for electrostatic discharge sensitivity during storage and assembly processes.
Selection Notes
Select this component when a dual N-channel configuration is required in a compact surface-mount footprint. Consider the specific RDS(ON) values relative to the available gate drive voltage to ensure adequate current handling. Evaluate thermal derating curves if operating near maximum power dissipation limits.
Part Context
This part belongs to the SSM6N43 series of small-signal MOSFETs manufactured by Toshiba Semiconductor and Storage. It utilizes the MOSVI technology platform designed for efficient switching performance within a JEDEC-standardized US-6 package format.
Replacement Considerations
Check for pin-compatible alternatives within the same series or package family. Verify that any substitute maintains the 20 V rating and similar switching characteristics without exceeding the absolute maximum ratings defined in the original documentation.
FAQ
What is the maximum gate-source voltage?
The absolute maximum rating for gate-source voltage is ±10 V.
How does the on-resistance vary with gate voltage?
RDS(ON) decreases as gate voltage increases, ranging from 1.52 Ω max at 1.5 V to 0.63 Ω max at 5.0 V.
What is the typical turn-off time?
The typical turn-off time is 75 ns under standard test conditions.
