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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.1A ES6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：100mA
- Rds On (Max) @ Id, Vgs：4Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：8.5pF @ 3V
- Power - Max：150mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：ES6
- Grade：-
- Qualification：-
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Overview
The Toshiba SSM6N44FE,LM is a dual N-channel silicon MOSFET in an ES6-6 surface-mount package. It features a drain-source breakdown voltage of 30 V and a continuous drain current of 100 mA. The device has a maximum on-resistance of 4.0 Ω at VGS = 4 V and 7.0 Ω at VGS = 2.5 V. Gate-source voltage limits are ±20 V, with a threshold voltage up to 1.5 V. Power dissipation is rated at 150 mW, operating between -55°C and +150°C. Switching times include a turn-on time of 50 ns and turn-off time of 200 ns.
Feature Summary
- Dual N-channel configuration within a compact ES6-6 package for high-density mounting.
- Low on-resistance optimized for efficient switching performance.
- High-speed switching capabilities suitable for rapid signal processing applications.
Applications
- High-speed switching circuits
- Analog switching applications
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details such as reel or cut tape specifications. Ensure compliance with AEC-Q101 automotive qualification requirements if applicable to the target design. Confirm RoHS status and environmental declarations prior to final procurement decisions.
Selection Notes
Select this component when a dual N-channel MOSFET with low on-resistance is required in a small footprint. Consider the 30 V drain-source voltage rating and 100 mA current limit for appropriate load matching. Evaluate thermal derating curves for operation above 25°C ambient temperature to ensure reliability within the 150 mW power dissipation limit.
Part Context
This part belongs to the SSM6N44 series of dual N-channel MOSFETs manufactured by Toshiba Semiconductor and Storage. It utilizes the MOSVI trademark technology. The component is designed for general-purpose switching tasks requiring compact integration and reliable performance in consumer and industrial electronics.
Replacement Considerations
Check for direct equivalents within the same series or package family. Verify pinout compatibility and electrical parameter alignment before substitution.
FAQ
What is the maximum gate-source voltage rating?
The absolute maximum gate-source voltage (VGSS) is rated at ±20 V.
How does the on-resistance vary with gate voltage?
The maximum on-resistance is 4.0 Ω at VGS = 4 V and increases to 7.0 Ω at VGS = 2.5 V.
What are the typical switching times for this device?
The typical turn-on time is 50 ns and the typical turn-off time is 200 ns under standard test conditions.
