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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.1A US6
- Series：U-MOSIII
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Rds On (Max) @ Id, Vgs：3.2Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：15.1pF @ 3V
- Power - Max：300mW
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：US6
- Grade：-
- Qualification：-
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Overview
The SSM6N48FU,LF is a silicon N-channel MOSFET from Toshiba's U-MOSIII series, packaged in a SC-88 (SOT-363) surface-mount housing. It features two independent channels with a drain-source voltage rating of 30 V and a continuous drain current of 100 mA. The device supports 2.5-V drive logic, exhibiting a maximum on-resistance of 5.4 Ω at VGS = 2.5 V and 3.2 Ω at VGS = 4.0 V. Key electrical parameters include a gate threshold voltage range of 0.8 V to 1.5 V, input capacitance of 15.1 pF, and turn-off time of 180 ns. Total power dissipation is rated at 300 mW, with an operating temperature range spanning -55 °C to +150 °C.
Feature Summary
- U-MOSIII technology enables low on-resistance for efficient switching performance.
- Optimized for 2.5-V drive applications to support low-voltage logic interfaces.
- Dual N-channel configuration provides compact integration for load switching tasks.
Applications
- Load switching applications
- Low-voltage signal routing
- Battery protection circuits
Procurement Notes
Verify the specific ordering suffix against official Toshiba documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and confirm that the intended application does not fall under restricted categories such as automotive or medical systems without explicit manufacturer approval.
Selection Notes
Select this component when a dual N-channel MOSFET with low on-resistance at 2.5-V gate drive is required. Verify that the 30-V breakdown voltage and 100-mA current limits align with circuit requirements. Consider thermal derating if ambient temperatures exceed standard operating ranges.
Part Context
This part belongs to Toshiba's SSM6N series of small-signal MOSFETs. It utilizes the U-MOSIII process technology, which focuses on reducing on-resistance within compact packages. The SC-88 footprint allows for high-density PCB layouts compared to larger transistor housings.
Replacement Considerations
Direct substitutes must match the SC-88 package, 30-V rating, and dual N-channel configuration. Verify on-resistance values at equivalent gate voltages to ensure functional parity in low-drive applications.
