SSM6N48FU,RF(D

Description：MOSFET 2N-CH 30V 0.1A US6
Series：-

SKU:505e9426ab6d Category: FET, MOSFET Arrays Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 0.1A US6
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
Rds On (Max) @ Id, Vgs：3.2Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id：1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：15.1pF @ 3V
Power - Max：300mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：US6
Grade：-
Qualification：-

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SSM6N48FU,RF(D

Overview

The SSM6N48FU,RF(D) is a dual N-channel MOSFET array manufactured by Toshiba Semiconductor and Storage. It features a 30V drain-source voltage rating and a continuous drain current of 0.1A at ambient temperature. The device operates in a US6 surface-mount package, equivalent to SC-88 or SOT-363. Key electrical parameters include a maximum power dissipation of 300mW and an on-resistance of 3.2Ω at a gate voltage of 4V. The component is designed for load switching applications.

Feature Summary

Dual N-channel configuration within a single compact package
Optimized for low-voltage logic-level switching operations
Designed specifically for load switching applications

Applications

Load switching circuits
Logic-level signal control
Low-power electronic device protection

Procurement Notes

Verify the exact ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape specifications. Confirm that the received components match the specified US6 package dimensions and pinout configuration. Check for any specific handling requirements related to electrostatic discharge during storage and installation processes.

Selection Notes

Select this component when a dual N-channel MOSFET solution is required for space-constrained designs. Ensure the application current does not exceed the 0.1A continuous rating. Verify that the gate drive voltage aligns with the specified on-resistance characteristics for optimal performance in low-voltage environments.

Part Context

This part belongs to Toshiba's series of small-signal MOSFET arrays intended for portable electronics. The US6 package provides a footprint suitable for high-density PCB layouts. It serves as a compact alternative to discrete single-transistor solutions where dual-channel functionality is necessary for synchronized switching tasks.