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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 4A 6DFN
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4A
- Rds On (Max) @ Id, Vgs：46mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：2.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：280pF @ 15V
- Power - Max：1W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-WDFN Exposed Pad
- Supplier Device Package：6-µDFN (2x2)
- Grade：-
- Qualification：-
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Overview
The SSM6N55NU,LF is a silicon N-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It features a 30V drain-source voltage rating and supports continuous drain currents up to 4A. The device utilizes the U-MOSVII-H technology for enhanced performance. It is housed in a compact 6-UDFN(2x2) surface-mount package with an exposed pad for thermal dissipation. The component operates within a temperature range of -55°C to +150°C junction temperature. Key electrical characteristics include a maximum on-resistance of 84mΩ at 4.5V gate drive and a typical input capacitance of 129pF.
Feature Summary
- U-MOSVII-H technology integration for optimized switching efficiency
- Logic-level gate compatibility enabling direct 1.8V drive capability
- Compact 6-UDFN package design supporting high-density PCB layouts
Applications
- DC-DC converter power stages
- Power management switch circuits
- Load switching applications in portable devices
Procurement Notes
Verify the complete part number including the LF suffix to ensure lead-free compliance. Confirm the specific datasheet revision matches the required electrical tolerances. Check for AEC-Q101 qualification if automotive reliability standards are mandatory for the target application environment.
Selection Notes
Select this component when a dual N-channel configuration or low Rds(on) is required in a small footprint. Ensure the gate drive voltage meets the 1.8V logic level requirement for optimal conduction. Verify that the 1W power dissipation rating aligns with the thermal management capabilities of the final system design.
Part Context
This part belongs to the SSM6N series of small-signal MOSFETs from Toshiba. It shares the 6-UDFN package form factor with other variants like the SSM6N58NU but differs in specific threshold and resistance parameters. The series is designed for general-purpose power switching in consumer electronics.
Replacement Considerations
Direct pin-compatible substitutes may include the SSM6N58NU,LF from the same manufacturer family. Cross-vendor replacements require careful verification of the 30V Vdss and 4A Id ratings to ensure circuit safety and performance parity.
