SSM6N61NU,LF

SSM6N61NU,LF

$0.58
  • Description:MOSFET 2N-CH 20V 4A 6UDFNB
  • Series:-

SKU:67282d7ad65e Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 4A 6UDFNB
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:4A
  • Rds On (Max) @ Id, Vgs:33mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:3.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:410pF @ 10V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-WDFN Exposed Pad
  • Supplier Device Package:6-UDFNB (2x2)
  • Grade:-
  • Qualification:-

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SSM6N61NU,LF

Overview

The SSM6N61NU,LF is a dual N-channel small-signal MOSFET array manufactured by Toshiba Semiconductor and Storage. It features a 20V drain-source voltage rating and a continuous drain current of 4.0A. The device utilizes UDFN6 surface-mount packaging with an exposed pad for thermal management. Key electrical characteristics include a maximum gate threshold voltage of 2.6V at 1mA drain current and a total gate charge of 5.1nC at 10V. Input capacitance is specified as 180pF at 15V. The component supports junction temperatures up to 150°C and offers a power dissipation capacity of 2W.

Feature Summary

  • Dual N-channel configuration integrated into a single compact package
  • Logic-level gate control capability for efficient switching applications
  • Surface-mount UDFN6 package design optimized for thermal performance

Applications

  • DC-DC converter circuits
  • Power management switches
  • General-purpose signal switching

Procurement Notes

Verify the specific ordering suffix and tape-and-reel specifications against the manufacturer's latest datasheet before finalizing procurement orders. Confirm that the requested part number matches the exact electrical ratings and package dimensions required for the target application design. Ensure compliance with RoHS directives and check for any lead-time variations associated with the specific manufacturing batch or distributor channel selected for purchase.

Selection Notes

Select this component when a dual N-channel MOSFET solution is required within a minimal footprint constraint. The 20V rating and 4A current capacity suit low-voltage power distribution tasks. Consider the UDFN6 package for automated surface-mount assembly processes. Evaluate the thermal resistance characteristics of the exposed pad design against the expected power dissipation levels in the final system environment to ensure reliable operation under load conditions.

Part Context

This part belongs to Toshiba's series of small-signal MOSFET arrays designed for space-constrained electronic devices. The SSM6N61NU variant specifically targets applications requiring multiple N-channel switching elements in a unified package. It complements other models in the family that may offer different voltage or current ratings while maintaining consistent pinout and packaging standards for design flexibility across product lines.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative components by matching critical parameters such as Vds, Id, package type, and pin configuration. Consult the manufacturer's official cross-reference lists for validated replacements if direct substitution is required for production continuity.

SSM6N61NU,LFSSM6N61NU,LF
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