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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.8A UF6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：800mA (Ta)
- Rds On (Max) @ Id, Vgs：85mOhm @ 800mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：177pF @ 10V
- Power - Max：500mW (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：6-SMD, Flat Leads
- Supplier Device Package：UF6
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SSM6N62TU,LXHF is a dual N-channel MOSFET in a UF6 surface-mount package. It features a drain-source voltage of 20 V and a continuous drain current of 0.8 A. The device has a maximum power dissipation of 500 mW at 25°C ambient temperature. On-resistance values are 121 mΩ at VGS=1.2 V, 94 mΩ at VGS=1.5 V, 84 mΩ at VGS=1.8 V, 74 mΩ at VGS=2.5 V, and 67 mΩ at VGS=4.5 V. Gate-source voltage limits are ±8 V, with a typical gate threshold voltage of 0.6 V. Total gate charge is typically 2.0 nC at VDD=10 V and ID=800 mA.
Feature Summary
- AEC-Q101 qualified for automotive applications
- Capable of operation with a 1.2-V drive signal
- Low drain-source on-resistance across various gate voltages
Applications
- Power management switches
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix LXHF against the manufacturer's official orderable part number list to confirm intended use classification. Ensure that design parameters remain within absolute maximum ratings, particularly regarding channel temperature limits and thermal resistance calculations based on board material and pad area.
Selection Notes
Select this component when low-voltage switching with minimal drive voltage is required. The dual configuration supports independent or parallel operation. Evaluate thermal performance carefully due to the 500 mW power dissipation limit, ensuring adequate copper pad area on the PCB to maintain junction temperatures below 150°C under load.
Part Context
This part belongs to Toshiba's silicon N-channel MOSFET lineup designed for compact surface-mount applications. The UF6 package provides a small footprint suitable for dense circuit layouts. It serves as an alternative to single-channel devices when space efficiency and dual-switch functionality are prioritized in low-voltage power stages.
Replacement Considerations
SSM6N62TU,LF and SSM6N62TU,LXGF are listed as orderable parts within the same series. Verify pinout compatibility and electrical specifications before substitution.
