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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 4A 6DFN
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate, 1.8V Drive
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Rds On (Max) @ Id, Vgs：39.1mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：3.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：310pF @ 15V
- Power - Max：2W (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：6-WDFN Exposed Pad
- Supplier Device Package：6-µDFN (2x2)
- Grade：-
- Qualification：-
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Overview
The SSM6N67NU,LF is a dual N-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes UDFN-6 surface-mount packaging and operates within a temperature range of -55°C to +150°C. The device features a drain-source breakdown voltage (Vds) of 30 V and supports a continuous drain current (Id) of 4 A. Key electrical parameters include a maximum on-resistance (Rds(on)) of 39.1 mΩ, a gate threshold voltage (Vgs(th)) of 400 mV, and a total gate charge (Qg) of 3.2 nC. It is rated for 1 W power dissipation and meets AEC-Q101 automotive qualification standards.
Feature Summary
- Dual N-channel configuration in a compact UDFN-6 package
- Low on-resistance for efficient power management
- Automotive-grade reliability with AEC-Q101 certification
Applications
- Automotive electronic control units
- Power management circuits in consumer devices
- Industrial equipment switching applications
Procurement Notes
Verify the complete part number including the LF suffix to ensure lead-free compliance. Confirm that the UDFN-6 package dimensions match the PCB footprint requirements. Check for AEC-Q101 certification documentation if the application requires automotive-grade components. Ensure storage conditions adhere to moisture sensitivity levels specified in the datasheet.
Selection Notes
Select this component when a dual N-channel solution is required in a small form factor. The low Rds(on) value makes it suitable for applications prioritizing efficiency. Verify that the 30 V rating exceeds the maximum circuit voltage. Consider the 4 A current limit for load requirements. The AEC-Q101 qualification is essential for automotive deployments.
Part Context
This component belongs to Toshiba's U-MOSVII-H series of MOSFETs. The series focuses on low on-resistance and high reliability. The UDFN-6 package allows for space-constrained designs. The dual channel configuration reduces board area compared to single-channel alternatives.
Replacement Considerations
Check for direct pin-compatible substitutes within the same UDFN-6 family. Verify that alternative parts meet the 30 V and 4 A specifications. Ensure the replacement also holds AEC-Q101 certification if used in automotive contexts.
