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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 4A 6DFN
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate, 1.8V Drive
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Rds On (Max) @ Id, Vgs：84mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：1.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：129pF @ 15V
- Power - Max：2W (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：6-WDFN Exposed Pad
- Supplier Device Package：6-µDFN (2x2)
- Grade：-
- Qualification：-
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Overview
The SSM6N68NU,LF is a dual N-channel enhancement-mode MOSFET manufactured by Toshiba using U-MOSVII-H technology. It features a 30 V drain-source breakdown voltage and a continuous drain current of 4 A. The device exhibits a low on-resistance of 84 mOhms at Vgs = 10 V, with a gate charge of 1.8 nC and a minimum forward transconductance of 5.2 S. It operates within a temperature range of -55 °C to +150 °C, supports a power dissipation of 1 W, and is housed in a compact UDFN-6 surface-mount package.
Feature Summary
- Dual N-channel configuration integrated into a single UDFN-6 package for space-efficient circuit design
- U-MOSVII-H process technology enabling low on-resistance and fast switching performance
- AEC-Q101 qualification ensuring reliability for automotive electronic applications
Applications
- Automotive power management circuits
- DC-DC converter output stages
- Motor driver interfaces
Procurement Notes
Verify the component authenticity against the manufacturer's official datasheet specifications. Confirm that the ordering suffix matches the exact part number required for your design. Ensure compliance with RoHS directives and check for any specific handling requirements during assembly.
Selection Notes
Select this component when a dual N-channel solution is needed in a small footprint. The 30 V rating suits low-voltage systems. The low gate charge facilitates efficient drive from standard logic levels. Verify thermal constraints given the 1 W power dissipation limit in the UDFN-6 package.
Part Context
This part belongs to Toshiba's SSM6 series of small-signal MOSFETs. It utilizes the U-MOSVII-H technology node, which is optimized for low on-resistance and high-speed switching compared to older generations like U-MOSVI. The UDFN-6 package provides a compact form factor suitable for dense PCB layouts.
Replacement Considerations
Direct substitutes must match the dual N-channel topology, 30 V rating, 4 A current, and UDFN-6 package. Check equivalent on-resistance and gate charge values to ensure compatibility with existing drive circuits.
