SSM6N7002KFU,LF

SSM6N7002KFU,LF

$0.17
  • Description:MOSFET 2N-CH 60V 0.3A US6
  • Series:-

SKU:5574323df3e2 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 0.3A US6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:300mA
  • Rds On (Max) @ Id, Vgs:1.5Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id:2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:40pF @ 10V
  • Power - Max:285mW
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:US6
  • Grade:-
  • Qualification:-

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SSM6N7002KFU,LF

Overview

The SSM6N7002KFU,LF is a dual N-channel small-signal MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes U-MOSVII-H technology within a compact SOT-363-6 surface-mount package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 60 V and a continuous drain current (Id) of 300 mA. The device features a maximum on-resistance (Rds(on)) of 1.5 Ohms at a gate-source voltage of 10 V. It operates with a gate-source voltage range of ±20 V and has a typical gate charge (Qg) of 390 pC. Thermal performance includes a power dissipation (Pd) of 500 mW and an operating temperature range from -55°C to +150°C.

Feature Summary

  • Dual configuration integrating two independent N-channel enhancement-mode transistors in a single compact package for space-constrained designs.
  • High ESD protection capabilities suitable for sensitive signal processing applications.
  • Optimized switching characteristics with low gate charge and fast rise/fall times for efficient high-speed operation.

Applications

  • Signal switching in portable electronic devices
  • ESD protection circuits for data lines
  • Small-signal amplification stages

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to ensure correct packaging and RoHS compliance status. Confirm that the SOT-363-6 footprint matches the target PCB layout requirements. Check for any automotive qualification markings if the application requires AEC-Q101 certification, as standard commercial versions may differ from qualified variants.

Selection Notes

Select this component when a dual N-channel configuration is required in a minimal footprint. Ensure the 60 V voltage rating and 300 mA current capacity exceed the circuit's maximum operational demands. Consider the 1.5 Ohm on-resistance for power loss calculations in low-voltage applications. Verify thermal management capabilities given the 500 mW power dissipation limit in the SOT-363-6 package.

Part Context

This part belongs to the SSM6N7002 series of dual N-channel MOSFETs. It shares similar electrical characteristics with other members like SSM6N7002KFU,LXH but differs in packaging and specific pinout configurations. The series is designed for general-purpose switching and signal handling in consumer electronics.

Replacement Considerations

Direct substitutes are not explicitly confirmed in public datasheets. Evaluate alternatives based on matching Vds, Id, Rds(on), and package dimensions. Verify pin compatibility before replacement to avoid circuit redesign.

SSM6N7002KFU,LFSSM6N7002KFU,LF
$0.17
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