SSM6N813R,LF

Overview

The SSM6N813R is a dual N-channel silicon MOSFET from Toshiba's U-MOSVIII-H series, designed for automotive and general power management applications. It features a TSOP6F package with a drain-source voltage (VDSS) of 100 V and continuous drain current (ID) of 3.5 A. The device achieves low on-resistance values of 110 mΩ at VGS = 4.5 V and 88 mΩ at VGS = 10 V. It supports a maximum channel temperature of 175 °C and is qualified under AEC-Q101 standards.

Feature Summary

• AEC-Q101 qualified for automotive reliability requirements
• Optimized for 4.5 V gate drive operation
• Low drain-source on-resistance to improve efficiency

Applications

• Power Management Switches

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official list to confirm intended use classification. The standard LF suffix indicates general use, while LXHF denotes automotive qualification. Ensure the selected part number matches the required application environment before procurement.

Selection Notes

Select this component for circuits requiring high-voltage handling in a compact dual configuration. The 175 °C junction temperature rating allows for robust thermal performance. Verify that the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance.

Part Context

This device belongs to the SSM6N813 family within Toshiba's U-MOSVIII-H lineup. It shares the TSOP6F footprint with other dual MOSFETs but offers distinct voltage and current ratings compared to lower-voltage variants like the SSM6N43FU or single-channel models.

Replacement Considerations

Direct substitutes include SSM6N813R,LXGF and SSM6N813R,LF. Verify pinout compatibility and electrical parameters when considering alternative manufacturers' parts.