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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 2A 6TSOPF
- Series：U-MOSVIII-H
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Rds On (Max) @ Id, Vgs：103mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：3.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：290pF @ 15V
- Power - Max：1.8W (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：6-SMD, Flat Leads
- Supplier Device Package：6-TSOP-F
- Grade：-
- Qualification：-
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Overview
The SSM6N815R,LF is a dual N-channel MOSFET array from Toshiba Semiconductor and Storage, designed for surface-mount applications. It features a 100V drain-source voltage rating and a continuous drain current of 2A at 25°C. The device offers a maximum on-resistance of 103mΩ at 2A with a 10V gate drive. Key electrical parameters include a gate threshold voltage of 2.5V max at 100µA, a maximum gate charge of 3.1nC at 4.5V, and an input capacitance of 970pF max at 10V. It operates within a junction temperature range up to 150°C and dissipates 1.8W of power.
Feature Summary
- Dual N-channel configuration for efficient power management switching
- Low on-resistance characteristics optimized for high efficiency
- Logic-level gate compatibility supporting 4V control signals
Applications
- Power management circuits requiring dual channel isolation
- Battery protection systems in portable electronics
- General-purpose switching applications in consumer devices
Procurement Notes
Verify the specific ordering suffix against official Toshiba documentation to ensure correct packaging and variant selection. Confirm that the component meets all required environmental standards for the intended application. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and availability status before finalizing procurement plans.
Selection Notes
Select this component when a dual N-channel MOSFET solution is required with a 100V blocking capability and moderate current handling. The low gate charge and logic-level threshold make it suitable for direct interface with standard digital controllers. Ensure the thermal design accommodates the 1.8W power dissipation limit in the chosen TSOP-F package configuration.
Part Context
This component belongs to the U-MOSVIII-H series of MOSFETs manufactured by Toshiba Semiconductor and Storage. The series focuses on providing enhanced performance in surface-mount packages while maintaining reliability for automotive and industrial grade applications. The SSM6N815R,LF specifically utilizes the 6-TSOP-F package format.
Replacement Considerations
Consult official Toshiba substitution guides for verified alternative part numbers. Do not assume cross-compatibility with other manufacturers' dual N-channel MOSFETs without verifying pinout, electrical limits, and thermal characteristics.
