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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 0.1A US6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：100mA
- Rds On (Max) @ Id, Vgs：12Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.7V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：9.1pF @ 3V
- Power - Max：200mW (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：US6
- Grade：-
- Qualification：-
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Overview
The SSM6P15FU,LF is a dual P-channel silicon MOSFET manufactured by Toshiba Semiconductor and Storage. It features a maximum drain-source voltage of -30 V and a continuous drain current rating of -100 mA. The device operates with a gate-source voltage range of ±20 V and dissipates up to 200 mW at 25°C. Key electrical parameters include a maximum on-resistance of 12 Ω at VGS = -4 V and 32 Ω at VGS = -2.5 V. The threshold voltage ranges from -1.1 V to -1.7 V. Packaged in a compact SOT-363-6 (SC-88A) surface-mount format, it supports an operating temperature range from -55°C to +150°C.
Feature Summary
- Dual P-channel configuration integrated into a single small package for space-constrained designs
- Low on-resistance optimized for efficient switching at standard logic-level gate voltages
- High-speed switching capability suitable for rapid signal transition applications
Applications
- High speed switching applications
- Analog switch applications
- Load switching circuits
Procurement Notes
Verify the specific ordering suffix against official Toshiba documentation to confirm packaging type and compliance status. Confirm that the component meets all relevant environmental directives required for the target assembly process before finalizing procurement orders.
Selection Notes
Select this component when a dual P-channel topology is required within a minimal footprint. Ensure the design accommodates the specified on-resistance limits at the intended gate drive voltage. Verify that thermal dissipation requirements remain within the 200 mW absolute maximum rating under expected load conditions.
Part Context
This part belongs to Toshiba's SSM6 series of small-signal field-effect transistors. These devices are engineered for low power consumption and high-speed performance in portable electronics and battery-operated systems where board space is limited.
Replacement Considerations
Consult official Toshiba cross-reference lists for verified substitutes. Do not assume pin-compatible alternatives without verifying electrical characteristics and package dimensions against the original datasheet specifications.
