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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 0.25A US6
- Series：U-MOSVII
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：250mA (Ta)
- Rds On (Max) @ Id, Vgs：1.4Ohm @ 150mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：42pF @ 10V
- Power - Max：285mW (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：US6
- Grade：-
- Qualification：-
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Overview
The SSM6P35AFU,LF is a dual P-channel MOSFET manufactured by Toshiba Electronic Devices & Storage Corporation. It utilizes U-MOSVII technology and is housed in a US6 (SOT-363) surface-mount package. The device supports a drain-source voltage of -20 V and a continuous drain current of -250 mA. Key electrical parameters include a gate threshold voltage ranging from -0.3 V to -1 V and a forward transfer admittance with a typical value of 430 mS. On-resistance varies based on gate drive, measuring typically 3.2 Ω at -1.2 V and 1.1 Ω at -4.5 V. Dynamic characteristics feature a typical input capacitance of 21 pF and switching times including a rise time of 42 ns and fall time of 145 ns.
Feature Summary
- Supports low-voltage logic control through 1.2 V drive capability
- Provides low drain-source on-resistance for efficient power handling
- Integrates two independent P-channel transistors within a compact footprint
Applications
- Analog switches
Procurement Notes
Verify the specific ordering suffix against official Toshiba documentation to confirm packaging format and compliance status. Confirm that the component meets all required environmental standards for the intended deployment environment before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring dual P-channel switching with low-voltage drive compatibility. Ensure the application operates within the specified absolute maximum ratings, particularly regarding thermal dissipation limits and electrostatic discharge protection during handling.
Part Context
This part belongs to the SSM6P35 series of silicon P-channel MOSFETs produced by Toshiba. It represents a specialized small-signal transistor solution designed for integration into space-constrained electronic assemblies where dual-channel functionality is necessary.
Replacement Considerations
Consult official Toshiba cross-reference documentation for verified equivalent components. Do not substitute with generic alternatives without validating pinout compatibility and electrical parameter alignment.
