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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 0.33A ES6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：330mA
- Rds On (Max) @ Id, Vgs：1.31Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：1.2nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds：43pF @ 10V
- Power - Max：150mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：ES6
- Grade：-
- Qualification：-
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Overview
The SSM6P36FE,LM is a dual P-channel silicon MOSFET from Toshiba's U-MOSIII series. It features a 20 V drain-source breakdown voltage and a continuous drain current of -330 mA. The device supports 1.5 V drive logic with a maximum on-resistance of 3.60 Ω at VGS = -1.5 V. Packaged in an ES6-6 surface-mount configuration, it includes two independent channels within a single unit. Key electrical parameters include a gate threshold voltage range of -0.3 V to -1.0 V, a total gate charge of 1.2 nC, and a power dissipation rating of 150 mW.
Feature Summary
- Supports low-voltage 1.5 V drive logic for efficient control
- Dual channel configuration in a compact surface-mount package
- Optimized for low on-resistance across various gate-source voltages
Applications
- Power management switches
- Load switching applications
- Battery protection circuits
Procurement Notes
Verify the component authenticity by checking the manufacturer marking against official datasheet specifications. Confirm that the ordering suffix matches the required packaging format. Ensure compliance with RoHS directives and AEC-Q101 automotive qualification standards before integration into final designs.
Selection Notes
Select this component when a dual P-channel switch is required for low-voltage logic interfaces. Compare the 3.60 Ω maximum on-resistance at 1.5 V drive against alternative devices to ensure sufficient current handling for the specific load requirements. Consider the thermal derating characteristics for high ambient temperature environments.
Part Context
This part belongs to the SSM6P36 series of small signal MOSFETs manufactured by Toshiba Semiconductor and Storage. The series utilizes the U-MOSIII technology platform, designed specifically for low-voltage switching applications requiring fast response times and minimal power loss in portable electronic devices.
Replacement Considerations
SSM6P36TU,LF serves as a pin-compatible alternative offering similar electrical characteristics but housed in a UF-6 (SOT-363F) package instead of the ES6-6 form factor.
