SSM6P47NU,LF

SSM6P47NU,LF

$0.54
  • Description:MOSFET 2P-CH 20V 4A 6DFN
  • Series:-

SKU:bd1dbf8135ae Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 20V 4A 6DFN
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:4A
  • Rds On (Max) @ Id, Vgs:95mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:290pF @ 10V
  • Power - Max:1W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-WDFN Exposed Pad
  • Supplier Device Package:6-µDFN (2x2)
  • Grade:-
  • Qualification:-

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SSM6P47NU,LF

Overview

The SSM6P47NU,LF is a dual P-channel MOSFET array manufactured by Toshiba Semiconductor and Storage. It features a logic-level gate structure designed for low-voltage operation. The device supports a drain-source voltage (Vdss) of 20V and provides a continuous drain current of 4A per channel. Packaged in a compact 6-µDFN (2x2 mm) surface-mount format, it offers a total power dissipation rating of 1W. This configuration addresses requirements for high-current charging applications with low on-resistance characteristics.

Feature Summary

  • Dual P-channel architecture within a single compact package
  • Logic-level gate design for direct interface with low-voltage control signals
  • Optimized for high-current switching with low drain-source on-resistance

Applications

  • High-current battery charging circuits
  • Low-voltage DC-DC converter output stages
  • Power management switches in portable consumer electronics

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the requested part number matches the exact electrical parameters required for the target application, particularly regarding the 20V rating and 4A current capacity. Cross-reference the datasheet revision date to ensure compatibility with current manufacturing standards.

Selection Notes

Select this component when a dual P-channel solution is required for space-constrained designs operating at 20V. The logic-level gate capability allows for efficient driving from standard logic outputs without additional level-shifting circuitry. Ensure the thermal environment supports the 1W power dissipation limit within the µDFN package footprint.

Part Context

This device belongs to Toshiba's series of dual N-channel/P-channel MOSFET arrays intended for signal and high-speed switching applications. These components are engineered to reduce system size and power consumption in consumer and industrial equipment. The SSM6P47NU,LF specifically utilizes a P-channel configuration optimized for low-side or high-side switching tasks requiring fast response times.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.

SSM6P47NU,LFSSM6P47NU,LF
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