SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The SSM6P47NU,LF is a dual P-channel MOSFET array manufactured by Toshiba Semiconductor and Storage. It features a logic-level gate structure designed for low-voltage operation. The device supports a drain-source voltage (Vdss) of 20V and provides a continuous drain current of 4A per channel. Packaged in a compact 6-µDFN (2x2 mm) surface-mount format, it offers a total power dissipation rating of 1W. This configuration addresses requirements for high-current charging applications with low on-resistance characteristics.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the requested part number matches the exact electrical parameters required for the target application, particularly regarding the 20V rating and 4A current capacity. Cross-reference the datasheet revision date to ensure compatibility with current manufacturing standards.
Select this component when a dual P-channel solution is required for space-constrained designs operating at 20V. The logic-level gate capability allows for efficient driving from standard logic outputs without additional level-shifting circuitry. Ensure the thermal environment supports the 1W power dissipation limit within the µDFN package footprint.
This device belongs to Toshiba's series of dual N-channel/P-channel MOSFET arrays intended for signal and high-speed switching applications. These components are engineered to reduce system size and power consumption in consumer and industrial equipment. The SSM6P47NU,LF specifically utilizes a P-channel configuration optimized for low-side or high-side switching tasks requiring fast response times.
Public confirmed substitute part numbers are not available in the provided source material.