SSM6P54TU,LF

Overview

The SSM6P54TU,LF is a dual P-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It features a UF-6 package with two independent channels. The device supports a drain-source voltage of -20 V and a continuous drain current of -1.2 A. On-resistance values are specified as 228 mΩ at VGS = -2.5 V, 350 mΩ at VGS = -1.8 V, and 555 mΩ at VGS = -1.5 V. Gate-source voltage limits are ±8 V. Switching characteristics include a turn-on time of 19 ns and turn-off time of 18 ns under standard test conditions.

Feature Summary

• Designed for high-speed switching applications
• Optimized for low on-resistance to support 1.5 V drive logic levels
• Compact UF-6 package suitable for high-density mounting

Applications

• High-speed switching circuits
• Power management switch applications

Procurement Notes

Verify the component against the official Toshiba datasheet dated March 1, 2014. Confirm that the part number matches the specific electrical ratings and package type required for your design. Ensure compliance with all handling precautions regarding static electricity during assembly.

Selection Notes

Select this component when a dual P-channel configuration is required in a compact footprint. Consider the specific on-resistance requirements relative to the available gate drive voltage, as performance varies significantly between 1.5 V, 1.8 V, and 2.5 V drive levels.

Part Context

This component belongs to the SSM6P series of silicon P-channel MOSFETs from Toshiba. It utilizes the U-MOS technology platform designed for efficient power switching in small form factors. The UF-6 package provides thermal and electrical performance suitable for surface mount applications.

Replacement Considerations

No public substitute part numbers are documented in the provided source material.