SSM6P69NU,LF

Overview

The SSM6P69NU,LF is a dual P-channel MOSFET array manufactured by Toshiba Semiconductor and Storage. It features a drain-source voltage (V_DSS) of -20 V and a continuous drain current (I_D) of -4.0 A at Ta. The device exhibits a low on-resistance of 0.045 Ω at a gate-source voltage of 10 V. Packaged in a 6-µDFN (UDFN6) surface-mount case with an exposed pad, it supports an operating temperature up to 150°C and a maximum power dissipation of 1 W at ambient temperature.

Feature Summary

• Dual P-channel configuration for compact circuit design
• Low on-resistance for efficient power switching
• Exposed pad package for enhanced thermal performance

Applications

• Power management switches
• Battery protection circuits
• Load switching applications

Procurement Notes

Verify the ordering suffix LF indicates lead-free compliance when sourcing. Confirm the package designation matches UDFN6 or SOT-1118 requirements for your PCB layout. Ensure the manufacturer is identified as Toshiba Electronic Devices & Storage Corporation to guarantee component authenticity and traceability.

Selection Notes

Select this component for applications requiring dual P-channel switching within a small footprint. The -20 V rating suits low-voltage systems. Consider the 0.045 Ω resistance for efficiency needs. The exposed pad design aids thermal management in dense layouts compared to standard packages without thermal pads.

Part Context

This part belongs to Toshiba's SSM series of power management switches. It integrates two P-channel MOSFETs into a single package, replacing discrete components. The UDFN6 form factor provides space savings for portable electronics and consumer devices where board real estate is limited.

Replacement Considerations

Cross-reference with SSM6L61NU,LF for similar specifications. Verify pinout compatibility and electrical ratings before substitution. Ensure the alternative maintains the required -20 V and -4.0 A capabilities.