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The Vishay Siliconix SST174-T1-E3 is a P-Channel Junction Field-Effect Transistor (JFET) designed for surface-mount applications. It is housed in a compact SOT-23 package, also identified as TO-236-3 or SC-59-3. The device features a drain-source breakdown voltage of 30V and a maximum power dissipation of 350mW. Key electrical characteristics include an on-resistance of 85 Ohms and a maximum drain current of -20mA. The component operates within a temperature range of -55°C to 150°C junction temperature.
Verify the specific suffix 'T1' confirms the tape-and-reel packaging format required for automated assembly processes. Ensure the 'E3' designation aligns with lead-free manufacturing standards. Confirm that the SOT-23 footprint matches the target PCB layout dimensions before finalizing procurement orders.
Select this component when a P-Channel JFET with low leakage and moderate on-resistance is required in a small form factor. Consider the 30V breakdown limit for voltage headroom. Evaluate the 85 Ohm resistance against signal integrity requirements. The wide operating temperature range supports harsh environment deployments.
This part belongs to the standard JFET family from Vishay Siliconix, utilizing silicon technology. It serves as a discrete semiconductor solution for analog signal control. The T1 suffix indicates reel packaging, distinguishing it from cut-tape variants. It complements other passive and active components in mixed-signal circuit designs.
Consult official substitution lists for equivalent P-Channel JFETs in SOT-23 packages. Verify pinout compatibility and electrical parameter margins before replacing. Cross-reference datasheets for thermal resistance and package dimensions to ensure mechanical fit.