SST176 SOT-23 3L ROHS

$7.00

Description：JFET P-CH 30V SOT23-3
Series：SST176

SKU:ff53b2e06a50 Category: JFETs Brand: Linear Integrated Systems, Inc.

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Product introduction

Product Detailed Parameters

Description：JFET P-CH 30V SOT23-3
Series：SST176
Mfr：Linear Integrated Systems, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Voltage - Breakdown (V(BR)GSS)：30 V
Drain to Source Voltage (Vdss)：-
Current - Drain (Idss) @ Vds (Vgs=0)：-
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：-
Input Capacitance (Ciss) (Max) @ Vds：-
Resistance - RDS(On)：250 Ohms
Power - Max：350 mW
Operating Temperature：-55°C ~ 135°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3
Grade：-
Qualification：-

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SST176 SOT-23 3L ROHS

Overview

The Linear Integrated Systems SST176 is a single P-channel Junction Field-Effect Transistor (JFET) switch housed in a SOT-23 three-terminal surface-mount package. It serves as a direct replacement for the SILICONIX J/SST174 series, offering low on-resistance and minimal gate operating current. Key electrical characteristics include a Gate to Source Cutoff Voltage range of 1V to 4V, a Drain to Source Saturation Current between -2mA and -55mA, and a maximum Drain to Source On Resistance of 85Ω. The device supports a continuous power dissipation of 350mW at 25°C and operates within a junction temperature range of -55°C to 135°C.

Feature Summary

Direct functional replacement for the SILICONIX J/SST174 series components
Low drain-to-source on resistance for efficient signal switching
Minimal gate reverse current ensuring low gate operating current consumption

Applications

Analog signal routing and switching circuits
Low-power electronic control systems
Battery-powered instrumentation requiring minimal quiescent current

Procurement Notes

Verify that the specific ordering suffix corresponds to the SOT-23 3L package configuration rather than the TO-92 variant. Confirm RoHS compliance status matches the manufacturer's current documentation. Ensure the component is sourced from authorized distributors to guarantee authenticity and traceability. Check for any specific handling requirements related to electrostatic discharge during storage and assembly processes.

Selection Notes

Select this component when a P-channel JFET switch with low on-resistance is required for analog applications. The SST176 is suitable for designs needing a cutoff voltage between 1V and 4V. Consider the SOT-23 package for space-constrained printed circuit board layouts. Evaluate the thermal derating requirements if the operating environment exceeds 25°C to maintain safe power dissipation levels.

Part Context

This component belongs to the J/SST174 series of single P-channel JFET switches manufactured by Linear Integrated Systems. The series includes variants such as the SST174, SST175, and SST177, which differ primarily in their cutoff voltage and saturation current specifications. The SST176 specifically targets applications requiring moderate cutoff voltage thresholds while maintaining low leakage characteristics typical of junction field-effect technology.

Replacement Considerations

The datasheet explicitly identifies this part as a direct replacement for the SILICONIX J/SST174 series. When substituting other P-channel JFETs, verify that the alternative device meets or exceeds the 85Ω on-resistance limit and the 30V breakdown voltage ratings specified for the SST176.

FAQ

What is the maximum Gate to Source Breakdown Voltage for the SST176?

The maximum Gate to Source Breakdown Voltage is 30V, measured at a Gate current of 1µA with Drain-Source voltage at 0V.

How does the SST176 package compare to the TO-92 version?

The SST176 utilizes a SOT-23 3L surface-mount package, whereas the TO-92 version is a through-hole cylindrical package. Both share identical electrical characteristics but differ in physical mounting and dimensions.