SST177 SOT-23 3L ROHS

SST177 SOT-23 3L ROHS

$7.00
  • Description:JFET P-CH 30V SOT23-3
  • Series:SST177

SKU:4459f48204b5 Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET P-CH 30V SOT23-3
  • Series:SST177
  • Mfr:Linear Integrated Systems, Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Voltage - Breakdown (V(BR)GSS):30 V
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):-
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Resistance - RDS(On):300 Ohms
  • Power - Max:350 mW
  • Operating Temperature:-55°C ~ 135°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

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SST177 SOT-23 3L ROHS

Overview

The SST177 is a single P-channel JFET switch in an SOT-23-3L package, serving as a replacement for the SILICONIX J/SST174 series. It features low on-resistance (rDS(on) ≤ 85Ω max) and extremely low gate operating current (ID(off) = 10pA typ). Key electrical limits include a Gate to Source Voltage (VGSS) of 30V, Gate to Drain Voltage (VGDS) of 30V, and continuous power dissipation of 350mW at 25°C. The device operates within a junction temperature range of -55°C to 135°C and supports switching times with turn-on/turn-off delays around 10ns.

Feature Summary

  • Functions as a low on-resistance electronic switch suitable for signal routing applications.
  • Exhibits minimal gate leakage current, ensuring negligible power consumption during off-states.
  • Provides robust voltage handling capabilities with 30V ratings for both gate-source and gate-drain terminals.

Applications

  • Signal path switching in communication equipment
  • Battery management system isolation circuits
  • Test and measurement instrument input multiplexing

Procurement Notes

Verify the specific ordering suffix matches the required package variant, as Linear Integrated Systems offers both TO-92 and SOT-23 configurations within the same functional family. Confirm RoHS compliance status through official documentation prior to integration. Ensure supply chain sources provide valid traceability for automotive or industrial qualification requirements if applicable.

Selection Notes

Select this component when low static power consumption and fast switching speeds are critical design constraints. The SOT-23 package is appropriate for space-constrained PCB layouts requiring surface-mount technology. Evaluate thermal derating requirements carefully, as continuous power dissipation decreases by 2.8mW per degree Celsius above 25°C.

Part Context

This part belongs to the J/SST174 series of single P-channel JFET switches manufactured by Linear Integrated Systems. The series includes variants with different cutoff voltages and saturation currents to accommodate various load conditions. The SST177 specifically targets applications requiring moderate current handling with tight leakage specifications.

Replacement Considerations

Officially documented as a direct replacement for the SILICONIX J/SST174 series components. Verify pinout compatibility between legacy TO-92 packages and the modern SOT-23 footprint during board redesigns.

FAQ

What is the maximum continuous power dissipation for the SST177?

The maximum continuous power dissipation is 350mW at 25°C ambient temperature, with a derating factor of 2.8mW/°C above this threshold.

How does the SST177 compare to the J/SST174 series?

The SST177 is designed as a functional replacement for the SILICONIX J/SST174 series, offering similar electrical characteristics in a compact SOT-23 package.

What is the typical gate reverse current specification?

The typical gate reverse current (IGSS) is 1nA when VGS is 20V and VDS is 0V, indicating very low leakage in the off state.

SST177 SOT-23 3L ROHSSST177 SOT-23 3L ROHS
$7.00
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