ST05250

Overview

The ST05250 is a 250 W, 28/32 V LDMOS FET designed for wideband communication and ISM applications from HF to 1 GHz. It supports Class AB, B, or C operation with typical modulation formats. Key electrical parameters include a drain-source breakdown voltage (Vds) of 90 V, continuous drain current (Id) of 2.5 A, and on-resistance (Rds(on)) of 1 Ohm. The device operates at frequencies up to 945 MHz with a gain of 13.4 dB. It features a maximum operating temperature of +200 °C, housed in a B4E-5 SMD package.

Feature Summary

• High efficiency and linear gain operations
• Integrated ESD protection
• Large positive and negative gate-source voltage range for improved class C operation

Applications

• Wideband communication systems
• ISM band applications
• Class AB, B, or C amplifier designs

Procurement Notes

Verify the active status and lead times directly with STMicroelectronics or authorized distributors, as supply chain conditions change. Confirm RoHS compliance and specific packaging details before ordering. Ensure design compatibility with the B4E-5 package and thermal requirements for high-temperature operation.

Selection Notes

Select this component for RF power amplification requiring 250 W output within the HF to 1 GHz range. Consider the 90 V breakdown voltage and 1 Ohm on-resistance for circuit matching. Evaluate thermal management needs due to the +200 °C maximum junction temperature capability and SMD mounting style.

Part Context

The ST05250 belongs to STMicroelectronics' RF MOSFET transistor series, specifically LDMOS technology. It is categorized under RF Power MOSFETs intended for high-power, high-frequency applications. This part complements other ST RF transistors by offering robust performance in wideband scenarios.

Replacement Considerations

Check for direct pin-compatible substitutes or updated versions within the ST05250 family. Verify if newer generations offer improved efficiency or different packaging while maintaining the 250 W power rating and frequency range.