ST8812FX

Single Bipolar Transistors Overview

The ST8812FX is a high-voltage fast-switching NPN power transistor manufactured using Multi Epitaxial Planar technology. It features a Cellular Emitter structure with planar edge termination and deep base diffusion, enabling wide Reverse Biased Safe Operating Area (R.B.S.O.A.) and high switching speed. The device offers a collector-emitter voltage of 600 V, a collector current of 7 A, and total dissipation of 50 W at 25°C case temperature. It includes tight hFE control and comes in a fully insulated ISOWATT218FX package compliant with UL standards.

Single Bipolar Transistors Feature Summary

• High voltage capability with 600V collector-emitter breakdown
• Very high switching speed due to cellular emitter structure
• Tight hFE control for consistent performance
• Fully insulated package compliant with UL standards

Single Bipolar Transistors Applications

• Switch mode power supplies for CRT TV

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized channels as the ST8812FX is listed as an obsolete product. Confirm availability from secondary market suppliers if direct procurement from STMicroelectronics is not possible. Ensure the received units match the original specifications and packaging details provided in the datasheet before integration into designs.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high voltage handling and fast switching characteristics within power supply circuits. Consider the thermal resistance and insulation requirements when designing heat sinks and mounting structures. Evaluate the specific switching conditions and load parameters against the provided electrical characteristics to ensure reliable operation under expected operating conditions.

Single Bipolar Transistors Part Context

The ST8812FX belongs to the category of high voltage fast-switching NPN power transistors. It is designed for robust performance in demanding electronic environments, leveraging advanced semiconductor manufacturing techniques to achieve superior electrical properties compared to standard power transistors of its class.

Single Bipolar Transistors Replacement Considerations

As the ST8812FX is marked as obsolete, identify equivalent high-voltage NPN power transistors with similar voltage ratings, current capabilities, and switching speeds. Verify pin compatibility and thermal characteristics to ensure seamless replacement without significant circuit redesign.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the ST8812FX?

The maximum collector-emitter voltage (VCEO) is 600 V.

Is the ST8812FX package electrically insulated?

Yes, the ISOWATT218FX package is fully insulated and UL compliant, providing an insulation withstand voltage of 2500 V RMS from all leads to the external heatsink.

What technology is used to manufacture the ST8812FX?

It is manufactured using latest Multi Epitaxial Planar technology.