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Product Detailed Parameters
- Description：TRANS 4NPN QUAD 35V 3A 10-SIP
- Series：-
- Mfr：Sanken Electric USA Inc.
- Package：Bulk
- Transistor Type：4 NPN (Quad)
- Current - Collector (Ic) (Max)：3A
- Voltage - Collector Emitter Breakdown (Max)：35V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 1A
- Current - Collector Cutoff (Max)：10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：500 @ 500mA, 4V
- Power - Max：4W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：10-SIP
- Supplier Device Package：10-SIP
- Grade：-
- Qualification：-
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Overview
The STA413A is an NPN silicon epitaxial planar transistor manufactured by Sanken Electric. It features a collector current rating of 3 A and a collector-emitter voltage of 35 V. The device includes a built-in avalanche diode for protection against inductive load switching transients. Key electrical characteristics include a DC power dissipation of 3 W at 25°C case temperature, a maximum junction temperature of 150°C, and a minimum forward current gain (hFE) of 500 at IC=0.5A and VCE=4V. The saturation voltage is typically 0.5 V at IC=1A and IB=5mA.
Feature Summary
- Integrated avalanche diode for transient protection
- High current gain capability
- Epitaxial planar construction
Applications
- Inductive load switching circuits
- Power amplifier stages
- General-purpose switching applications
Procurement Notes
Verify the specific ordering suffix to confirm package type and tape/reel specifications. Confirm RoHS compliance status with the supplier. Check for the 'Not Recommended for New Designs' marking on official documentation before procurement planning.
Selection Notes
Select this component for applications requiring high current handling up to 3 A with moderate voltage ratings. Ensure adequate thermal management is provided to maintain junction temperature within limits during operation. Consider the built-in avalanche rating if driving inductive loads directly.
Part Context
This part belongs to Sanken's general-purpose NPN transistor lineup designed for medium-power applications. It utilizes epitaxial planar technology for reliable performance. The inclusion of an internal avalanche diode distinguishes it from standard switching transistors lacking such protection.
Replacement Considerations
- STK413-090E
- STK413-110E
FAQ
Does the STA413A have avalanche breakdown capability?
Yes, the STA413A features a built-in avalanche diode that allows it to withstand repetitive avalanche energy.
What is the maximum collector current rating?
The maximum continuous collector current (IC) is rated at 3 A.
Is this component suitable for new designs?
No, the datasheet explicitly states that the STA413A is not recommended for new designs.
