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Product Detailed Parameters
- Description：MOSFET 4N-CH 57V 3A 10SIP
- Series：-
- Mfr：Sanken Electric USA Inc.
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：4 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：57V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Rds On (Max) @ Id, Vgs：250mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：200pF @ 10V
- Power - Max：4W (Ta), 20W (Tc)
- Operating Temperature：150°C
- Mounting Type：Through Hole
- Package / Case：10-SIP
- Supplier Device Package：10-SIP
- Grade：-
- Qualification：-
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Overview
The STA509A is a MOS FET Array manufactured by Sanken Electric USA Inc. It features six N-channel enhancement mode MOSFETs in a single package with a flange mount configuration and 15 terminals. The device has a drain-source breakdown voltage (V(BR)DSS) of 52 V typical, with a maximum rating of 57 V. The gate-source voltage (VGS) is rated at ±20 V absolute maximum. At VGS = 4 V and ID = 1.0 A, the on-state resistance (RDS(on)) is typically 0.25 Ω. Continuous drain current is 4 A at case temperature of 25°C, while pulsed drain current reaches 20 A under specific pulse conditions.
Feature Summary
- Integrates six N-channel MOSFETs into a complex array configuration for space-efficient circuit design.
- Features a flange mount plastic/epoxy package suitable for thermal management via heatsink attachment.
- Includes built-in protection characteristics against avalanche energy stress under defined unclamped inductive load conditions.
Applications
- Motor control circuits requiring multiple switching elements
- Inverter applications utilizing parallel or independent channel configurations
- Power supply designs needing compact multi-FET arrays
Procurement Notes
Verify component authenticity through official Sanken Electric channels or authorized distributors. Confirm RoHS compliance status and lead times directly with suppliers. Ensure storage conditions remain within specified temperature ranges to maintain device integrity prior to assembly.
Selection Notes
Select this component when a multi-channel N-channel MOSFET solution is required with moderate voltage ratings around 50 V. Consider the flange mount package for applications where thermal dissipation through the case is necessary. Evaluate the total gate charge and capacitance parameters for high-speed switching requirements compared to discrete alternatives.
Part Context
The STA509A belongs to the MOS FET Array category produced by Sanken Electric. It is designed as a complex semiconductor device integrating multiple transistors. The datasheet indicates it is not recommended for new designs, suggesting potential obsolescence or replacement by newer series components in current product portfolios.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Sanken Electric technical support for current equivalent recommendations or updated series replacements.
