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The STAC2932FW is an N-channel RF power MOSFET manufactured by STMicroelectronics, designed for large-signal applications up to 175 MHz. It features a gold metallized gate structure and utilizes the ST air-cavity STAC244F package for superior thermal stability. The device operates at a rated voltage of 50 V with a test current of 250 mA. Key electrical parameters include a minimum output power of 390 W and a gain of 21 dB at 175 MHz. This component is intended for use in high-frequency RF amplification systems requiring robust performance under demanding conditions.
Verify part authenticity through authorized STMicroelectronics distributors or certified partners. Confirm the specific suffix 'W' matches project requirements, as it may indicate tape-and-reel packaging variations. Check RoHS compliance status and expiration dates on datasheets. Ensure storage conditions adhere to moisture sensitivity level (MSL) 3 guidelines to prevent package damage before soldering.
Select this component when designing circuits requiring high output power around 175 MHz with a 50 V supply. Compare against similar models like the STAC2942B if higher frequency operation up to 250 MHz is needed. Evaluate thermal management solutions compatible with the STAC244F package footprint. Consider the trade-off between gain and linearity based on the specific amplifier topology.
The STAC2932FW belongs to the STAC293 series of RF power MOSFETs from STMicroelectronics. This family focuses on high-efficiency amplification using advanced air-cavity packaging. It serves as a core active element in RF front-end designs where power density and thermal resilience are critical constraints for system longevity.
The SD2932 is a comparable alternative offering 300 W output power at 175 MHz. Verify pinout compatibility and thermal resistance differences between the STAC244F and SD packages before substitution. Review gain specifications to ensure signal integrity remains within acceptable limits for the target application.